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2SK494 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK494
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 22 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 2.5 V
   |Id|ⓘ - Corriente continua de drenaje: 0.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 50 Ohm
   Paquete / Cubierta: SPAK
 

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2SK494 Datasheet (PDF)

 ..1. Size:24K  hitachi
2sk494.pdf pdf_icon

2SK494

2SK494Silicon N-Channel Junction FETApplicationLow frequency / High frequency amplifierOutlineSPAK1. Drain122. Gate33. Source2SK494Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDS 22 VGate to source voltage VGSO 22 VDrain current ID 100 mAGate current IG 10 mAChannel power dissipation Pch 300 mWChannel temperatu

 9.1. Size:3846K  nec
2sk490.pdf pdf_icon

2SK494

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 9.2. Size:206K  isahaya
2sk492.pdf pdf_icon

2SK494

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

Otros transistores... 2SK429S , 2SK429L , 2SK439 , 2SK443 , 2SK444 , 2SK445 , 2SK447 , 2SK492 , 18N50 , 2SK511 , 2SK512 , 2SK522 , 2SK525 , 2SK526 , 2SK530 , 2SK531 , 2SK532 .

History: SLU5N65S | SIE726DF

 

 
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