2SK494 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK494

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 22 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 2.5 V

|Id|ⓘ - Corriente continua de drenaje: 0.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 50 Ohm

Encapsulados: SPAK

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2SK494 datasheet

 ..1. Size:24K  hitachi
 2sk494.pdf pdf_icon

2SK494

2SK494 Silicon N-Channel Junction FET Application Low frequency / High frequency amplifier Outline SPAK 1. Drain 1 2 2. Gate 3 3. Source 2SK494 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDS 22 V Gate to source voltage VGSO 22 V Drain current ID 100 mA Gate current IG 10 mA Channel power dissipation Pch 300 mW Channel temperatu

 9.1. Size:3846K  nec
 2sk490.pdf pdf_icon

2SK494

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 9.2. Size:206K  isahaya
 2sk492.pdf pdf_icon

2SK494

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

Otros transistores... 2SK429S, 2SK429L, 2SK439, 2SK443, 2SK444, 2SK445, 2SK447, 2SK492, BS170, 2SK511, 2SK512, 2SK522, 2SK525, 2SK526, 2SK530, 2SK531, 2SK532