2SK494 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK494
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 22 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 2.5 V
|Id|ⓘ - Corriente continua de drenaje: 0.1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 50 Ohm
Paquete / Cubierta: SPAK
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2SK494 Datasheet (PDF)
2sk494.pdf

2SK494Silicon N-Channel Junction FETApplicationLow frequency / High frequency amplifierOutlineSPAK1. Drain122. Gate33. Source2SK494Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDS 22 VGate to source voltage VGSO 22 VDrain current ID 100 mAGate current IG 10 mAChannel power dissipation Pch 300 mWChannel temperatu
2sk490.pdf

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2sk492.pdf

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
Otros transistores... 2SK429S , 2SK429L , 2SK439 , 2SK443 , 2SK444 , 2SK445 , 2SK447 , 2SK492 , 18N50 , 2SK511 , 2SK512 , 2SK522 , 2SK525 , 2SK526 , 2SK530 , 2SK531 , 2SK532 .
History: SLU5N65S | SIE726DF



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