2SK525 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK525
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 70 nS
Cossⓘ - Capacitancia de salida: 390 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
Paquete / Cubierta: 2-10L1B
Búsqueda de reemplazo de MOSFET 2SK525
2SK525 Datasheet (PDF)
2sk525.pdf
isc N-Channel MOSFET Transistor 2SK525DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =150V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for low voltage,high speed applications,such as off-line switching power supplies
2sk104 2sk105 2sk162 2sk163 2sk193 2sk195 2sk505 2sk507 2sk514 2sk518 2sk519 2sk523 2sk533 2sk660 2sk997 2sk998 2sk1000 2sk1109.pdf
2sk526.pdf
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2sk522.pdf
2SK522Silicon N-Channel Junction FETApplicationVHF amplifier, Mixer, local oscillatorOutlineSPAK1. Gate122. Source33. Drain2SK522Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitGate to drain voltage VGDO 30 VGate current IG 10 mADrain current ID 20 mAChannel power dissipation Pch 200 mWChannel temperature Tch 150 CStorage temperature T
2sk528.pdf
isc N-Channel MOSFET Transistor 2SK528DESCRIPTIONDrain Current I =2A@ T =25D CDrain Source Voltage-: V =400V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor c
2sk526.pdf
isc N-Channel MOSFET Transistor 2SK526DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for low voltage,high speed applications,such as off-line switching power supplies
2sk529.pdf
isc N-Channel MOSFET Transistor 2SK529DESCRIPTIONDrain Current I =2A@ T =25D CDrain Source Voltage-: V =450V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor c
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
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