2SK530 Todos los transistores

 ..1. Size:42K  no
 2sk530.pdf

 ..2. Size:227K  inchange semiconductor
 2sk530.pdf

isc N-Channel MOSFET Transistor 2SK530 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =400V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies

 9.1. Size:515K  1
 2sk104 2sk105 2sk162 2sk163 2sk193 2sk195 2sk505 2sk507 2sk514 2sk518 2sk519 2sk523 2sk533 2sk660 2sk997 2sk998 2sk1000 2sk1109.pdf

 9.2. Size:201K  toshiba
 2sk537.pdf

Free Datasheet http //www.datasheet4u.com/ Free Datasheet http //www.datasheet4u.com/ Free Datasheet http //www.datasheet4u.com/ Free Datasheet http //www.datasheet4u.com/ Free Datasheet http //www.datasheet4u.com/ Free Datasheet http //www.datasheet4u.com/

 9.3. Size:45K  toshiba
 2sk539.pdf

 9.4. Size:60K  sanyo
 2sk536.pdf

Ordering number EN2550 N-Channel Enhancement MOS Silicon FET 2SK536 Analog Switch Applications Features Package Dimensions Large yfs . unit mm Enhancement type. 2024B Low ON-state resistance. [2SK536] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 Gate 2 Drain 3 Source SANYO CP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbo

 9.5. Size:44K  hitachi
 2sk534.pdf

 9.6. Size:41K  no
 2sk532.pdf

 9.7. Size:41K  no
 2sk538.pdf

 9.8. Size:44K  no
 2sk531.pdf

 9.9. Size:279K  inchange semiconductor
 2sk532.pdf

isc N-Channel MOSFET Transistor 2SK532 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 0.085 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 9.10. Size:234K  inchange semiconductor
 2sk538.pdf

isc N-Channel MOSFET Transistor 2SK538 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor c

 9.11. Size:234K  inchange semiconductor
 2sk531.pdf

isc N-Channel MOSFET Transistor 2SK531 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =450V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies

 9.12. Size:236K  inchange semiconductor
 2sk534.pdf

isc N-Channel MOSFET Transistor 2SK534 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies

 9.13. Size:234K  inchange semiconductor
 2sk539.pdf

isc N-Channel MOSFET Transistor 2SK539 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies