AP4034GH-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP4034GH-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 41 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 3 V

Qgⓘ - Carga de la puerta: 16.5 nC

trⓘ - Tiempo de subida: 60 nS

Cossⓘ - Capacitancia de salida: 160 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: T0252

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AP4034GH-HF datasheet

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ap4034gh-hf.pdf pdf_icon

AP4034GH-HF

AP4034GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID 41A G RoHS Compliant & Halogen-Free S Description AP4034 series are from Advanced Power innovated design and G D silicon process technology to achieve the lowes

 6.1. Size:186K  ape
ap4034gh.pdf pdf_icon

AP4034GH-HF

AP4034GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID 41A G RoHS Compliant & Halogen-Free S Description AP4034 series are from Advanced Power innovated des

 7.1. Size:75K  1
ap4034gyt-hf.pdf pdf_icon

AP4034GH-HF

Advanced Power Electronics Corp. AP4034GYT-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D BV 30V Good Thermal Performance DSS G Low On-resistance RDS(ON) 9m RoHS-compliant, halogen-free ID 15.5A S Description D D D Advanced Power MOSFETs from APEC provide the designer with D the best combination of fast switching, ruggedized device design, low on

 7.2. Size:96K  ape
ap4034gm-hf.pdf pdf_icon

AP4034GH-HF

AP4034GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 9m D Fast Switching Characteristic ID 13A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast

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