AP4034GH-HF Todos los transistores

 

AP4034GH-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4034GH-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 41 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 60 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: T0252
     - Selección de transistores por parámetros

 

AP4034GH-HF Datasheet (PDF)

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ap4034gh-hf.pdf pdf_icon

AP4034GH-HF

AP4034GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID 41AG RoHS Compliant & Halogen-FreeSDescriptionAP4034 series are from Advanced Power innovated design andGDsilicon process technology to achieve the lowes

 6.1. Size:186K  ape
ap4034gh.pdf pdf_icon

AP4034GH-HF

AP4034GH-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID 41AG RoHS Compliant & Halogen-FreeSDescriptionAP4034 series are from Advanced Power innovated des

 7.1. Size:75K  1
ap4034gyt-hf.pdf pdf_icon

AP4034GH-HF

Advanced Power Electronics Corp.AP4034GYT-HF-3N-channel Enhancement-mode Power MOSFETSimple Drive RequirementDBV 30VGood Thermal PerformanceDSSGLow On-resistance RDS(ON) 9mRoHS-compliant, halogen-free ID 15.5ASDescriptionDDDAdvanced Power MOSFETs from APEC provide the designer withDthe best combination of fast switching, ruggedized device design,low on

 7.2. Size:96K  ape
ap4034gm-hf.pdf pdf_icon

AP4034GH-HF

AP4034GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDDD Simple Drive Requirement RDS(ON) 9mD Fast Switching Characteristic ID 13AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer with the bestcombination of fast

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