AP4034GYT-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP4034GYT-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.57 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 15.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 185 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: PMPAK3X3

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AP4034GYT-HF datasheet

 ..1. Size:75K  1
ap4034gyt-hf.pdf pdf_icon

AP4034GYT-HF

Advanced Power Electronics Corp. AP4034GYT-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D BV 30V Good Thermal Performance DSS G Low On-resistance RDS(ON) 9m RoHS-compliant, halogen-free ID 15.5A S Description D D D Advanced Power MOSFETs from APEC provide the designer with D the best combination of fast switching, ruggedized device design, low on

 ..2. Size:97K  ape
ap4034gyt-hf.pdf pdf_icon

AP4034GYT-HF

AP4034GYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID 15.5A G S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desig

 0.1. Size:75K  ape
ap4034gyt-hf-3.pdf pdf_icon

AP4034GYT-HF

Advanced Power Electronics Corp. AP4034GYT-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D BV 30V Good Thermal Performance DSS G Low On-resistance RDS(ON) 9m RoHS-compliant, halogen-free ID 15.5A S Description D D D Advanced Power MOSFETs from APEC provide the designer with D the best combination of fast switching, ruggedized device design, low on

 7.1. Size:96K  ape
ap4034gm-hf.pdf pdf_icon

AP4034GYT-HF

AP4034GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 9m D Fast Switching Characteristic ID 13A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast

Otros transistores... 2SK531, 2SK532, AP4034AGM-HF, AP4034AGYT-HF, AP4034ASGYT-HF, AP4034GH-HF, AP4034GM-HF, AP4034GMT-HF, IRFZ24N, AP4036AGYT-HF, AP4085I, AP4085W, AP40N03GP, AP40N03GS, AP40P03GH, AP40P03GI-HF, AP40P03GJ