AP4036AGYT-HF Todos los transistores

 

AP4036AGYT-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4036AGYT-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.57 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 145 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
   Paquete / Cubierta: PMPAK3X3
 

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AP4036AGYT-HF Datasheet (PDF)

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AP4036AGYT-HF

AP4036AGYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 11m RoHS Compliant & Halogen-Free ID 14AGSDDDescriptionDDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device desig

 4.1. Size:116K  ape
 ap4036agyt.pdf pdf_icon

AP4036AGYT-HF

AP4036AGYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 11m RoHS Compliant & Halogen-Free ID 14AGSDDDescriptionDDAP4036A series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on-r

 6.1. Size:59K  ape
 ap4036agm-hf.pdf pdf_icon

AP4036AGYT-HF

AP4036AGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDDD Simple Drive Requirement RDS(ON) 11mD Fast Switching Characteristic ID 11.8AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer with the bestcombination of

 9.1. Size:75K  1
 ap4034gyt-hf.pdf pdf_icon

AP4036AGYT-HF

Advanced Power Electronics Corp.AP4034GYT-HF-3N-channel Enhancement-mode Power MOSFETSimple Drive RequirementDBV 30VGood Thermal PerformanceDSSGLow On-resistance RDS(ON) 9mRoHS-compliant, halogen-free ID 15.5ASDescriptionDDDAdvanced Power MOSFETs from APEC provide the designer withDthe best combination of fast switching, ruggedized device design,low on

MOSTRAR MÁS

Otros transistores... 2SK532 , AP4034AGM-HF , AP4034AGYT-HF , AP4034ASGYT-HF , AP4034GH-HF , AP4034GM-HF , AP4034GMT-HF , AP4034GYT-HF , IRF830 , AP4085I , AP4085W , AP40N03GP , AP40N03GS , AP40P03GH , AP40P03GI-HF , AP40P03GJ , AP40P03GP .

History: 2SK247 | S-LP2307LT1G | HGW059N12S | PMPB47XP | MXP6006DF | MPSY65M170 | SM6A24NSU

 

 
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