AP40P03GH Todos los transistores

 

AP40P03GH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP40P03GH
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 56 nS
   Cossⓘ - Capacitancia de salida: 280 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: TO252
 

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AP40P03GH Datasheet (PDF)

 ..1. Size:216K  ape
 ap40p03gh.pdf pdf_icon

AP40P03GH

AP40P03GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30AGSDescriptionGDThe TO-252 package is widely preferred for all commercial-industrialSTO-252(H)surface mount applications and suited for low volt

 ..2. Size:846K  cn vbsemi
 ap40p03gh.pdf pdf_icon

AP40P03GH

AP40P03GHwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.025 at VGS = - 4.5 V - 35APPLICATIONS Load Switch Battery SwitchSTO-252 GDG D S P-Channel MOSFETA

 0.1. Size:216K  ape
 ap40p03gh-hf ap40p03gj-hf.pdf pdf_icon

AP40P03GH

AP40P03GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30AG RoHS CompliantSDescriptionGDThe TO-252 package is widely preferred for all commercial-industrialSTO-252(H)surface mount applications an

 6.1. Size:95K  ape
 ap40p03gi-hf.pdf pdf_icon

AP40P03GH

AP40P03GI-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 28m Fast Switching Characteristic ID -30AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, rugged

MOSTRAR MÁS

Otros transistores... AP4034GM-HF , AP4034GMT-HF , AP4034GYT-HF , AP4036AGYT-HF , AP4085I , AP4085W , AP40N03GP , AP40N03GS , IRF730 , AP40P03GI-HF , AP40P03GJ , AP40P03GP , AP40T03GH , AP40T03GI , AP40T03GJ , AP40T03GP , AP40T03GS .

History: IPB100N06S3-04 | H5N2522LS | ME80N75T-G | 4N80L-TND-R | EFC4615R | HMS80N10AL | YJS10N04A

 

 
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