AP40T03GH Todos los transistores

 

AP40T03GH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP40T03GH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 28 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 62 nS
   Cossⓘ - Capacitancia de salida: 145 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: TO252
 

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AP40T03GH Datasheet (PDF)

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 ap40t03gh.pdf pdf_icon

AP40T03GH

AP40T03GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 25m Fast Switching ID 28AGSDescriptionGAdvanced Power MOSFETs from APEC provide theDTO-252(H)Sdesigner with the best combination of fast switching,ruggedized device design, low on-resista

 0.1. Size:97K  ape
 ap40t03gh-hf ap40t03gj-hf.pdf pdf_icon

AP40T03GH

AP40T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 25m Fast Switching Characteristic ID 28AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,TO-

 6.1. Size:97K  ape
 ap40t03gi.pdf pdf_icon

AP40T03GH

AP40T03GIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETDD Low Gate Charge BVDSS 30V Single Drive Requirement RDS(ON) 25m Lower On-resistance ID 28AGGSSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and

 6.2. Size:96K  ape
 ap40t03gi-hf.pdf pdf_icon

AP40T03GH

AP40T03GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 30V Single Drive Requirement RDS(ON) 25m Lower On-resistance ID 28AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device de

MOSTRAR MÁS

Otros transistores... AP4085I , AP4085W , AP40N03GP , AP40N03GS , AP40P03GH , AP40P03GI-HF , AP40P03GJ , AP40P03GP , RU7088R , AP40T03GI , AP40T03GJ , AP40T03GP , AP40T03GS , AP40T10GH-HF , AP40T10GI-HF , AP40T10GP-HF , AP40T10GR .

History: IRL520L | SPP11N80C3 | SWB7N65DW

 

 
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