AP40T03GJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP40T03GJ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 28 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 8.8 nC
   trⓘ - Tiempo de subida: 62 nS
   Cossⓘ - Capacitancia de salida: 145 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: TO251

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AP40T03GJ Datasheet (PDF)

..1. Size:214K ape
ap40t03gj.pdf

AP40T03GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 25m Fast Switching ID 28AGSDescriptionGAdvanced Power MOSFETs from APEC provide theDTO-252(H)Sdesigner with the best combination of fast switching,ruggedized device design, low on-resista

0.1. Size:97K ape
ap40t03gh-hf ap40t03gj-hf.pdf

AP40T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 25m Fast Switching Characteristic ID 28AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,TO-

6.1. Size:97K ape
ap40t03gi.pdf

AP40T03GIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETDD Low Gate Charge BVDSS 30V Single Drive Requirement RDS(ON) 25m Lower On-resistance ID 28AGGSSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and

6.2. Size:96K ape
ap40t03gi-hf.pdf

AP40T03GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 30V Single Drive Requirement RDS(ON) 25m Lower On-resistance ID 28AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device de

6.3. Size:62K ape
ap40t03gp.pdf

AP40T03GS/PPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETDD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 25m Fast Switching ID 28AGG RoHS CompliantSSDescriptionThe Advanced Power MOSFETs from APEC provide theThe Advanced Power MOSFETs from APEC provide theGdesigner with the best combi

6.4. Size:97K ape
ap40t03gp-hf ap40t03gs-hf.pdf

AP40T03GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 25m Fast Switching Characteristic ID 28AG RoHS Compliant & Halogen-FreeSDescriptionThe Advanced Power MOSFETs APEC provide theAdvanced Power MOSFETs fromfrom APEC provide theGdesigner wit

6.5. Size:171K ape
ap40t03gh.pdf

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