AP40T03GP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP40T03GP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 31.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 28 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 62 nS

Cossⓘ - Capacitancia de salida: 145 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: TO220

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AP40T03GP datasheet

 ..1. Size:62K  ape
 ap40t03gp.pdf pdf_icon

AP40T03GP

AP40T03GS/P Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D D Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 25m Fast Switching ID 28A G G RoHS Compliant S S Description The Advanced Power MOSFETs from APEC provide the The Advanced Power MOSFETs from APEC provide the G designer with the best combi

 0.1. Size:97K  ape
 ap40t03gp-hf ap40t03gs-hf.pdf pdf_icon

AP40T03GP

AP40T03GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 25m Fast Switching Characteristic ID 28A G RoHS Compliant & Halogen-Free S Description The Advanced Power MOSFETs APEC provide the Advanced Power MOSFETs fromfrom APEC provide the G designer wit

 6.1. Size:97K  ape
 ap40t03gi.pdf pdf_icon

AP40T03GP

AP40T03GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D D Low Gate Charge BVDSS 30V Single Drive Requirement RDS(ON) 25m Lower On-resistance ID 28A G G S S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

 6.2. Size:96K  ape
 ap40t03gi-hf.pdf pdf_icon

AP40T03GP

AP40T03GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS 30V Single Drive Requirement RDS(ON) 25m Lower On-resistance ID 28A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device de

MOSTRAR MÁS

Otros transistores... AP40N03GS, AP40P03GH, AP40P03GI-HF, AP40P03GJ, AP40P03GP, AP40T03GH, AP40T03GI, AP40T03GJ, IRLB3034, AP40T03GS, AP40T10GH-HF, AP40T10GI-HF, AP40T10GP-HF, AP40T10GR, AP4224AGM, AP4224GM, AP4224LGM-HF