AP4232BGM-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP4232BGM-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7.5 nS

Cossⓘ - Capacitancia de salida: 90 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm

Encapsulados: SO8

 Búsqueda de reemplazo de AP4232BGM-HF MOSFET

- Selecciónⓘ de transistores por parámetros

 

AP4232BGM-HF datasheet

 ..1. Size:93K  ape
 ap4232bgm-hf.pdf pdf_icon

AP4232BGM-HF

AP4232BGM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Lower Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 22m Fast Switching Characteristic ID 7.6A Halogen Free & RoHS Compliant Product D2 D2 D1 Description D1 Advanced Power MOSFETs from APEC provide the G2 S2 designer with the best combination o

 8.1. Size:178K  ape
 ap4232agm.pdf pdf_icon

AP4232BGM-HF

AP4232AGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V D2 D2 Simple Drive Requirement RDS(ON) 23m D1 D1 Dual N MOSFET Package ID 7.8A G2 S2 G1 SO-8 S1 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast switching, ruggedized devi

 8.2. Size:169K  ape
 ap4232gm.pdf pdf_icon

AP4232BGM-HF

AP4232GM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS 30V D2 D2 Simple Drive Requirement RDS(ON) 22m D1 D1 Dual N MOSFET Package ID 7.8A G2 RoHS Compliant & Halogen-Free S2 G1 SO-8 S1 Description AP4232 series are fro

 8.3. Size:207K  ape
 ap4232gm-hf.pdf pdf_icon

AP4232BGM-HF

AP4232GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V D2 D2 Simple Drive Requirement RDS(ON) 22m D1 D1 Dual N MOSFET Package ID 7.8A G2 RoHS Compliant S2 G1 SO-8 S1 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast switchi

MOSTRAR MÁS

Otros transistores... AP4224GM, AP4224LGM-HF, AP4226AGM, AP4226BGM-HF, AP4226GM, AP4228GM, AP4230GM-HF, AP4232AGM, IRF3205, AP4232GM-HF, AP42T03GP, AP4405GM, AP4407GM-HF, AP4407GP, AP4407GS, AP4407I-HF, AP4409AGEM