AP4405GM Todos los transistores

 ..1. Size:216K  ape
 ap4405gm.pdf

AP4405GM RoHS-compliat Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D Lower On-resistance D RDS(ON) 8.2m D Fast Switching Characteristic ID -14A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device de

 9.1. Size:155K  ape
 ap4409gep.pdf

AP4409GEP-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS -35V D Simple Drive Requirement RDS(ON) 8.2m G Fast Switching Characteristic ID -80A RoHS Compliant & Halogen-Free S Description AP4409 series are from Advanced Power innovat

 9.2. Size:122K  ape
 ap4409gep-hf.pdf

AP4409GEP-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS -35V D Simple Drive Requirement RDS(ON) 8.2m G Fast Switching Characteristic ID -80A RoHS Compliant & Halogen-Free S Description AP4409 series are from Advanced Power innovated design and silicon process technology to achieve the lowe

 9.3. Size:211K  ape
 ap4407i.pdf

AP4407I-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance D BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -40A G RoHS Compliant & Halogen-Free S Description AP4407 series are from Advanced Power innovated design and silicon process technology to achieve the lowest

 9.4. Size:182K  ape
 ap4409agem.pdf

AP4409AGEM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS -35V D D D Low On-resistance RDS(ON) 7.5m Fast Switching Characteristic ID -14.5A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized devic

 9.5. Size:61K  ape
 ap4409agem-hf.pdf

AP4409AGEM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS -35V D D D Low On-resistance RDS(ON) 7.5m Fast Switching Characteristic ID -14.5A G S S RoHS Compliant S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switch

 9.6. Size:98K  ape
 ap4407gp-hf ap4407gs-hf.pdf

AP4407GS/P-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -50A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge

 9.7. Size:170K  ape
 ap4407gm.pdf

AP4407GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET BVDSS -30V Simple Drive Requirement D D D RDS(ON) 14m Low On-resistance D ID -10.7A Fast Switching G RoHS Compliant & Halogen-Free S S SO-8 S D Description AP4407 series are from Advanced Pow

 9.8. Size:218K  ape
 ap4407gp ap4407gs.pdf

AP4407GS/P RoHS-compliat Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -50A G S Description Advanced Power MOSFETs from APEC provide the designer with G the best combination of fast switching, ruggedized device design, D S TO-263(

 9.9. Size:184K  ape
 ap4409gem.pdf

AP4409GEM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS -35V D D D Low On-resistance RDS(ON) 7.5m Fast Switching Characteristic ID -14.5A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device

 9.10. Size:99K  ape
 ap4409ageh-hf.pdf

AP4409AGEH-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -35V D Lower On-resistance RDS(ON) 8m G Fast Switching Characteristic ID -85A RoHS Compliant & Halogen-Free S Description G Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switching,

 9.11. Size:94K  ape
 ap4407i-hf.pdf

AP4407I-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -40A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz

 9.12. Size:208K  ape
 ap4407gm-hf.pdf

AP4407GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D Low On-resistance D RDS(ON) 14m D Fast Switching ID -10.7A G RoHS Compliant S S SO-8 S D Description Advanced Power MOSFETs from APEC provide the designer with G the best combination of fast switching, ruggedized d

 9.13. Size:55K  ape
 ap4409agm-hf.pdf

AP4409AGM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D D Low On-resistance RDS(ON) 7.2m Fast Switching Characteristic ID -15A G S RoHS Compliant & Halogen-Free S SO-8 S D Description AP4409A series are from Advanced Power innovated design and silicon process technol

 9.14. Size:71K  ape
 ap4407s-p.pdf

AP4407S/P Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -50A G S Description The Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-26

 9.15. Size:993K  allpower
 ap4407c.pdf

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 ap4407.pdf

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 ap4409s.pdf

 9.18. Size:1552K  cn apm
 ap4409a.pdf

AP4409A -30V P-Channel Enhancement Mode MOSFET Description The AP4409A uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I = 14A DS D R

 9.19. Size:2126K  cn apm
 ap4407a.pdf

AP4407A 30V P-Channel Enhancement Mode MOSFET Description The AP4407A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -30V ID = -12A RDS(ON)

 9.20. Size:1385K  cn apm
 ap4407b.pdf

AP4407B 30V P-Channel Enhancement Mode MOSFET Description The AP4407B uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-11.3A DS D R

 9.21. Size:1957K  cn apm
 ap4406b.pdf

AP4406B 30V N-Channel Enhancement Mode MOSFET Description The AP4406B uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =10A DS D R

 9.22. Size:1400K  cn apm
 ap4406a.pdf

AP4406A 30V N-Channel Enhancement Mode MOSFET Description The AP4406A uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =12A DS D R