AP4409GEP-HF Todos los transistores

 

AP4409GEP-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4409GEP-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 35 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 750 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0082 Ohm
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

AP4409GEP-HF Datasheet (PDF)

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AP4409GEP-HF

AP4409GEP-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS -35VD Simple Drive Requirement RDS(ON) 8.2mG Fast Switching Characteristic ID -80A RoHS Compliant & Halogen-FreeSDescriptionAP4409 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowe

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 ap4409gep.pdf pdf_icon

AP4409GEP-HF

AP4409GEP-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS -35VD Simple Drive Requirement RDS(ON) 8.2mG Fast Switching Characteristic ID -80A RoHS Compliant & Halogen-FreeSDescriptionAP4409 series are from Advanced Power innovat

 6.1. Size:184K  ape
 ap4409gem.pdf pdf_icon

AP4409GEP-HF

AP4409GEMRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS -35VDDD Low On-resistance RDS(ON) 7.5m Fast Switching Characteristic ID -14.5AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device

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 ap4409agem.pdf pdf_icon

AP4409GEP-HF

AP4409AGEMRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS -35VDDD Low On-resistance RDS(ON) 7.5m Fast Switching Characteristic ID -14.5AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized devic

MOSTRAR MÁS

Otros transistores... AP42T03GP , AP4405GM , AP4407GM-HF , AP4407GP , AP4407GS , AP4407I-HF , AP4409AGEM , AP4409GEM , IRF1404 , AP4410AGM , AP4410GM , AP4411GM , AP4412GM , AP4413GM , AP4415GH , AP4415GJ , AP4415GM .

History: IXTP50N28T

 

 
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