AP4423GM-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP4423GM-HF
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua
de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 12 nS
Cossⓘ - Capacitancia de salida: 530 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
Encapsulados: SO8
Búsqueda de reemplazo de AP4423GM-HF MOSFET
- Selecciónⓘ de transistores por parámetros
AP4423GM-HF datasheet
..1. Size:96K ape
ap4423gm-hf.pdf 
AP4423GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D Low On-resistance RDS(ON) 15m D Fast Switching Characteristic ID -11A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of f
6.1. Size:171K ape
ap4423gm.pdf
AP4423GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D Low On-resistance RDS(ON) 15m D Fast Switching Characteristic ID -11A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP4423 series are from
9.1. Size:60K ape
ap4426gm-hf.pdf
AP4426GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D D Fast Switching Characteristic RDS(ON) 6.5m D Low On-resistance ID 16A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fa
9.2. Size:93K ape
ap4429gm-hf.pdf
AP4429GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ultra_Low On-resistance BVDSS 35V D D D Simple Drive Requirement RDS(ON) 5m D Fast Switching Characteristic ID 18A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination o
9.3. Size:118K ape
ap4425go.pdf
AP4425GO RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Small & Thin Package D BVDSS -20V S S D Fast Switching Characteristic RDS(ON) 42m G S Capable of 1.8V Gate Drive ID -4.2A S TSSOP-8 D D Description G The Advanced Power MOSFETs from APEC provide the S designer with the best combination of fast switching, ru
9.4. Size:93K ape
ap4424agm.pdf
AP4424AGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30V D D D Simple Drive Requirement RDS(ON) 9m D Fast Switching Characteristic ID 13A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desi
9.5. Size:247K ape
ap4428gm.pdf
AP4428GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D D Fast Switching Characteristic RDS(ON) 6m D Low On-resistance ID 16A G S S S SO-8 Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device de
9.6. Size:219K ape
ap4424gm.pdf
AP4424GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D D Low On-resistance RDS(ON) 9m D Fast Switching Characteristic ID 13.8A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desi
9.7. Size:197K ape
ap4427gm.pdf
AP4427GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 35V D D D Fast Switching Characteristic RDS(ON) 6.6m D RoHS Compliant ID 16A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device des
9.8. Size:96K ape
ap4424gm-hf.pdf
AP4424GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D D Low On-resistance RDS(ON) 9m D Fast Switching Characteristic ID 13.8A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fa
9.9. Size:170K ape
ap4426gm.pdf
AP4426GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D D Fast Switching Characteristic RDS(ON) 6.5m D Low On-resistance ID 16A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP4426 series are from A
9.10. Size:93K ape
ap4420gh ap4420gj.pdf
AP4420GH/J Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 35V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic G ID 52A S RoHS Compliant Description The Advanced Power MOSFETs from APEC provide the G D S designer with the best combination of fast switching, TO-252(H
9.11. Size:197K ape
ap4425gm.pdf
AP4425GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 35V D D D Fast Switching Characteristic RDS(ON) 9m D RoHS Compliant ID 13A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design,
Otros transistores... AP4417GH, AP4417GJ, AP4418GH, AP4418GJ, AP4419GH, AP4419GJ, AP4420GH, AP4420GJ, AON7408, AP4424AGM, AP4424GM, AP4425GM, AP4425GO, AP4426GM-HF, AP4427GM, AP4428GM, AP4429GM-HF
