AP4430GM-HF Todos los transistores

 

AP4430GM-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4430GM-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 35 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7.5 nS
   Cossⓘ - Capacitancia de salida: 420 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0046 Ohm
   Paquete / Cubierta: SO8
     - Selección de transistores por parámetros

 

AP4430GM-HF Datasheet (PDF)

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ap4430gm-hf.pdf pdf_icon

AP4430GM-HF

AP4430GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Ultra_Low On-resistance BVDSS 35VDDD Simple Drive Requirement RDS(ON) 4.6mD Fast Switching Characteristic ID 20AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination

 6.1. Size:167K  ape
ap4430gm.pdf pdf_icon

AP4430GM-HF

AP4430GM-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ultra_Low On-resistance BVDSS 35VDDD Simple Drive Requirement RDS(ON) 4.6mD Fast Switching Characteristic ID 20AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP4430 series are

 7.1. Size:249K  ape
ap4430gem.pdf pdf_icon

AP4430GM-HF

AP4430GEMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDD Fast Switching Characteristic RDS(ON) 4mDD Low On-resistance ID 20AGSSSSO-8DescriptionDGAdvanced Power MOSFETs from APEC provide the designerwith the best combination of fast switching,ruggedized devicede

 9.1. Size:95K  ape
ap4438cgm-hf.pdf pdf_icon

AP4430GM-HF

AP4438CGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDDD Simple Drive Requirement RDS(ON) 11.5mD Fast Switching Characteristic ID 11.8AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination o

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History: CSE9130 | WM06P17MR | SWK15N04V | FQI7N60 | SSF11NS70UF | SI7101DN | P2610ADG

 

 
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