AP4430GM-HF
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP4430GM-HF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 35
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 20
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7.5
nS
Cossⓘ - Capacitancia
de salida: 420
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0046
Ohm
Paquete / Cubierta:
SO8
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AP4430GM-HF
Datasheet (PDF)
..1. Size:93K ape
ap4430gm-hf.pdf 
AP4430GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Ultra_Low On-resistance BVDSS 35VDDD Simple Drive Requirement RDS(ON) 4.6mD Fast Switching Characteristic ID 20AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination
6.1. Size:167K ape
ap4430gm.pdf 
AP4430GM-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ultra_Low On-resistance BVDSS 35VDDD Simple Drive Requirement RDS(ON) 4.6mD Fast Switching Characteristic ID 20AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP4430 series are
7.1. Size:249K ape
ap4430gem.pdf 
AP4430GEMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDD Fast Switching Characteristic RDS(ON) 4mDD Low On-resistance ID 20AGSSSSO-8DescriptionDGAdvanced Power MOSFETs from APEC provide the designerwith the best combination of fast switching,ruggedized devicede
9.1. Size:95K ape
ap4438cgm-hf.pdf 
AP4438CGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDDD Simple Drive Requirement RDS(ON) 11.5mD Fast Switching Characteristic ID 11.8AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination o
9.2. Size:176K ape
ap4434gm.pdf 
AP4434GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low on-resistance BVDSS 20VDDD Capable of 2.5V gate drive RDS(ON) 18.5mD Surface mount package ID 8.3AGSSSSO-8DDescriptionThe Advanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,Sruggedized devi
9.3. Size:97K ape
ap4439gmt-hf.pdf 
AP4439GMT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD SO-8 Compatible RDS(ON) 10m Lower Gate Charge ID -58AG RoHS Compliant & Halogen-FreeSDDescriptionDDAP4439 series are from Advanced Power innovated design and siliconDprocess technology to achieve the lowest p
9.4. Size:95K ape
ap4433gm-hf.pdf 
AP4433GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDD Lower Gate Charge RDS(ON) 30mD Fast Switching Characteristic ID -7.4AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of
9.5. Size:93K ape
ap4439gm-hf.pdf 
AP4439GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDD Lower On-resistance RDS(ON) 10mD Fast Switching Characteristic ID -13.3AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination
9.6. Size:94K ape
ap4438bgm-hf.pdf 
AP4438BGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDDD Simple Drive Requirement RDS(ON) 14mD Fast Switching Characteristic ID 10.4AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of
9.7. Size:76K ape
ap4434gh-hf.pdf 
AP4434GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 20V Capable of 2.5V Gate Drive RDS(ON) 18.5m Fast Switching Characteristic ID 21AG RoHS Compliant & Halogen-FreeSDescriptionGAdvanced Power MOSFETs from APEC provide the designer with theDSTO-252(H)best combination of fast
9.8. Size:116K ape
ap4438gyt.pdf 
AP4438GYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 12m RoHS Compliant & Halogen-Free ID 13.7AGSDDDescriptionDDAP4438 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on-r
9.9. Size:202K ape
ap4435gm-hf.pdf 
AP4435GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDD Low On-resistance RDS(ON) 20mD Fast Switching Characteristic ID -9AGS RoHS CompliantSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,
9.10. Size:177K ape
ap4436gm.pdf 
AP4436GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low on-resistance BVDSS 20VDDD Capable of 2.5V gate drive RDS(ON) 32mD Surface mount package ID 6.4AGSSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,Sruggedized device des
9.11. Size:93K ape
ap4434gm-hf.pdf 
AP4434GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 20V Capable of 2.5V Gate Drive RDS(ON) 18.5m Surface Mount Package ID 8.3AG Halogen Free & RoHS Compliant ProductSDescriptionDDAdvanced Power MOSFETs from APEC provide theDDdesigner with the best combination of fast switch
9.12. Size:94K ape
ap4432gm.pdf 
AP4432GMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDDD Fast Switching Characteristic RDS(ON) 15mD RoHS Compliant ID 10AGSSSSO-8DescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device de
9.13. Size:214K ape
ap4435gh ap4435gj.pdf 
AP4435GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Lower On-resistance RDS(ON) 20m Fast Switching Characteristic ID -40AGSDescriptionGThe TO-252 package is widely preferred for all commercial-industrialDS TO-252(H)surface mount applications and suited for low voltag
9.14. Size:100K ape
ap4435gh-hf ap4435gj-hf.pdf 
AP4435GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Lower On-resistance RDS(ON) 20m Fast Switching Characteristic ID -40AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,
9.15. Size:57K ape
ap4438agm-hf.pdf 
AP4438AGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDD Low On-resistance RDS(ON) 12.5mDD Fast Switching Characteristic ID 11.2AG RoHS Compliant & Halogen-Free SSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of
9.16. Size:76K ape
ap4434agh-hf-pre.pdf 
AP4434AGH-HFPreliminaryAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 20V Capable of 1.8V Gate Drive RDS(ON) 22m Fast Switching Characteristic ID 25AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGThe Advanced Power MOSFETs from APEC provide theD
9.17. Size:54K ape
ap4435gm.pdf 
AP4435GMRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDD Low On-resistance D RDS(ON) 20mD Fast Switching Characteristic ID -9AGSSSO-8 SDescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device d
9.18. Size:95K ape
ap4434agm-hf.pdf 
AP4434AGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20VDDD Capable of 1.8V Gate Drive RDS(ON) 22mD Fast Switching Characteristic ID 8.7AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of
9.19. Size:57K ape
ap4433gh-hf.pdf 
AP4433GH-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -30V Simple Drive Requirement RDS(ON) 30m Fast Switching Characteristic ID -21.5AG RoHS Compliant & Halogen-FreeSDescriptionAP4433 series are from Advanced Power innovated design andGsilicon process technology to achieve the lo
9.20. Size:59K ape
ap4438gyt-hf.pdf 
AP4438GYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 12m RoHS Compliant & Halogen-Free ID 13.7AGSDDDescriptionDDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device desi
9.21. Size:168K ape
ap4438cgm.pdf 
AP4438CGM-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDDD Simple Drive Requirement RDS(ON) 11.5mD Fast Switching Characteristic ID 11.8AGS RoHS Compliant & Halogen-Free SSSO-8DDescriptionAP4438C series are fr
9.22. Size:95K ape
ap4435gyt-hf.pdf 
AP4435GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Small Size & Lower Profile RDS(ON) 21m RoHS Compliant & Halogen-Free ID -11AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide theDdesigner with the best combination of fast switching,ruggedized device des
9.23. Size:60K ape
ap4434agyt-hf.pdf 
AP4434AGYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 20VD Small Size & Lower Profile RDS(ON) 18m RoHS Compliant & Halogen-Free ID 10.8AGDSDDDescriptionDAP4434A series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on
9.24. Size:59K ape
ap4438gsm-hf.pdf 
AP4438GSM-HFHalogen-Free ProductAdvanced Power N-CHANNEL MOSFET WITH SCHOTTKYElectronics Corp. DIODE Simple Drive Requirement BVDSS 30VDDD Good Recovery Time RDS(ON) 11.5mD Fast Switching Performance ID 11.7AGS RoHS Compliant & Halogen-FreeSSO-8SDDescriptionAdvanced Power MOSFETs from APEC provide theSchottky Diodedesigner with the best co
9.25. Size:93K ape
ap4439gh-hf.pdf 
AP4439GH-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID -58AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching, DTO-
9.26. Size:122K ape
ap4433gi-hf.pdf 
AP4433GI-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 32m Fast Switching Characteristic ID -21AG RoHS Compliant & Halogen-FreeSDescriptionAP4433 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest
9.27. Size:94K ape
ap4438gm-hf.pdf 
AP4438GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDDD Simple Drive Requirement RDS(ON) 11.5mD Fast Switching Characteristic ID 11.8AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of
9.28. Size:93K ape
ap4437gm-hf.pdf 
AP4437GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDD Lower On-resistance RDS(ON) 16mD Fast Switching Characteristic ID -10.4AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination
9.31. Size:819K cn vbsemi
ap4435gj.pdf 
AP4435GJwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.022 at VGS = - 4.5 V - 35APPLICATIONSTO-251 Load SwitchS Battery SwitchGDP-Channel MOSFETG D STop
9.32. Size:2937K cn vbsemi
ap4435gm.pdf 
AP4435GMwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 D
9.33. Size:1408K cn apm
ap4435b.pdf 
AP4435B -30V P-Channel Enhancement Mode MOSFET Description The AP4435B uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-9.3A DS DR
9.34. Size:1538K cn apm
ap4435a.pdf 
AP4435A -30V P-Channel Enhancement Mode MOSFET Description The AP4435A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -30V ID = 9.5A RDS(ON)
Otros transistores... AP4424GM
, AP4425GM
, AP4425GO
, AP4426GM-HF
, AP4427GM
, AP4428GM
, AP4429GM-HF
, AP4430GEM
, AON7410
, AP4432GM
, AP4433GM-HF
, AP4434AGH-HF
, AP4434AGM-HF
, AP4434AGYT-HF
, AP4434GH-HF
, AP4434GM
, AP4435GH-HF
.
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