AP4433GM-HF Todos los transistores

 

AP4433GM-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4433GM-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 140 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
   Paquete / Cubierta: SO8
 

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AP4433GM-HF Datasheet (PDF)

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 ap4433gm-hf.pdf pdf_icon

AP4433GM-HF

AP4433GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDD Lower Gate Charge RDS(ON) 30mD Fast Switching Characteristic ID -7.4AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of

 7.1. Size:57K  ape
 ap4433gh-hf.pdf pdf_icon

AP4433GM-HF

AP4433GH-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -30V Simple Drive Requirement RDS(ON) 30m Fast Switching Characteristic ID -21.5AG RoHS Compliant & Halogen-FreeSDescriptionAP4433 series are from Advanced Power innovated design andGsilicon process technology to achieve the lo

 7.2. Size:122K  ape
 ap4433gi-hf.pdf pdf_icon

AP4433GM-HF

AP4433GI-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 32m Fast Switching Characteristic ID -21AG RoHS Compliant & Halogen-FreeSDescriptionAP4433 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest

 9.1. Size:93K  ape
 ap4430gm-hf.pdf pdf_icon

AP4433GM-HF

AP4430GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Ultra_Low On-resistance BVDSS 35VDDD Simple Drive Requirement RDS(ON) 4.6mD Fast Switching Characteristic ID 20AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination

MOSTRAR MÁS

Otros transistores... AP4425GO , AP4426GM-HF , AP4427GM , AP4428GM , AP4429GM-HF , AP4430GEM , AP4430GM-HF , AP4432GM , IRF9540N , AP4434AGH-HF , AP4434AGM-HF , AP4434AGYT-HF , AP4434GH-HF , AP4434GM , AP4435GH-HF , AP4435GJ-HF , AP4435GM-HF .

History: SDF9130 | SSM3K315T | BL7N65B-A | P1004BS | IPD60R280PFD7S | SWN5N70K | BSF077N06NT3G

 

 
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