AP4438BGM-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP4438BGM-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 140 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: SO8

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AP4438BGM-HF datasheet

 ..1. Size:94K  ape
 ap4438bgm-hf.pdf pdf_icon

AP4438BGM-HF

AP4438BGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 14m D Fast Switching Characteristic ID 10.4A G S RoHS Compliant & Halogen-Free S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of

 8.1. Size:95K  ape
 ap4438cgm-hf.pdf pdf_icon

AP4438BGM-HF

AP4438CGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 11.5m D Fast Switching Characteristic ID 11.8A G S RoHS Compliant & Halogen-Free S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination o

 8.2. Size:116K  ape
 ap4438gyt.pdf pdf_icon

AP4438BGM-HF

AP4438GYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Lower Profile RDS(ON) 12m RoHS Compliant & Halogen-Free ID 13.7A G S D D Description D D AP4438 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-r

 8.3. Size:57K  ape
 ap4438agm-hf.pdf pdf_icon

AP4438BGM-HF

AP4438AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Low On-resistance RDS(ON) 12.5m D D Fast Switching Characteristic ID 11.2A G RoHS Compliant & Halogen-Free S S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of

MOSTRAR MÁS

Otros transistores... AP4434GM, AP4435GH-HF, AP4435GJ-HF, AP4435GM-HF, AP4435GYT-HF, AP4436GM, AP4437GM-HF, AP4438AGM-HF, STP80NF70, AP4438CGM-HF, AP4438GM-HF, AP4438GSM-HF, AP4438GYT-HF, AP4439GH-HF, AP4439GM-HF, AP4439GMT-HF, AP4451GH-HF