AP4438CGM-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP4438CGM-HF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 11.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 140 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0115 Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de AP4438CGM-HF MOSFET
AP4438CGM-HF Datasheet (PDF)
ap4438cgm-hf.pdf

AP4438CGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDDD Simple Drive Requirement RDS(ON) 11.5mD Fast Switching Characteristic ID 11.8AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination o
ap4438cgm.pdf

AP4438CGM-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDDD Simple Drive Requirement RDS(ON) 11.5mD Fast Switching Characteristic ID 11.8AGS RoHS Compliant & Halogen-Free SSSO-8DDescriptionAP4438C series are fr
ap4438bgm-hf.pdf

AP4438BGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDDD Simple Drive Requirement RDS(ON) 14mD Fast Switching Characteristic ID 10.4AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of
ap4438gyt.pdf

AP4438GYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 12m RoHS Compliant & Halogen-Free ID 13.7AGSDDDescriptionDDAP4438 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on-r
Otros transistores... AP4435GH-HF , AP4435GJ-HF , AP4435GM-HF , AP4435GYT-HF , AP4436GM , AP4437GM-HF , AP4438AGM-HF , AP4438BGM-HF , IRF1407 , AP4438GM-HF , AP4438GSM-HF , AP4438GYT-HF , AP4439GH-HF , AP4439GM-HF , AP4439GMT-HF , AP4451GH-HF , AP4451GM-HF .
History: VBE2102M | AFN3452 | 2SK3512-01SJ | FQPF5N50CT | NCE70N1K4I | GP2M012A080NG | TSD5N65M
History: VBE2102M | AFN3452 | 2SK3512-01SJ | FQPF5N50CT | NCE70N1K4I | GP2M012A080NG | TSD5N65M



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