AP4438GM-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP4438GM-HF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2.5 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 11.8 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 10.5 nC
Tiempo de subida (tr): 6 nS
Conductancia de drenaje-sustrato (Cd): 125 pF
Resistencia entre drenaje y fuente RDS(on): 0.0115 Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de MOSFET AP4438GM-HF
AP4438GM-HF Datasheet (PDF)
ap4438gm-hf.pdf
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ap4438gyt.pdf
AP4438GYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 12m RoHS Compliant & Halogen-Free ID 13.7AGSDDDescriptionDDAP4438 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on-r
ap4438gyt-hf.pdf
AP4438GYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 12m RoHS Compliant & Halogen-Free ID 13.7AGSDDDescriptionDDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device desi
ap4438gsm-hf.pdf
AP4438GSM-HFHalogen-Free ProductAdvanced Power N-CHANNEL MOSFET WITH SCHOTTKYElectronics Corp. DIODE Simple Drive Requirement BVDSS 30VDDD Good Recovery Time RDS(ON) 11.5mD Fast Switching Performance ID 11.7AGS RoHS Compliant & Halogen-FreeSSO-8SDDescriptionAdvanced Power MOSFETs from APEC provide theSchottky Diodedesigner with the best co
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