AP4438GYT-HF Todos los transistores

 

AP4438GYT-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4438GYT-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.57 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 125 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: PMPAK3X3
 

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AP4438GYT-HF Datasheet (PDF)

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AP4438GYT-HF

AP4438GYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 12m RoHS Compliant & Halogen-Free ID 13.7AGSDDDescriptionDDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device desi

 5.1. Size:116K  ape
ap4438gyt.pdf pdf_icon

AP4438GYT-HF

AP4438GYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 12m RoHS Compliant & Halogen-Free ID 13.7AGSDDDescriptionDDAP4438 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on-r

 7.1. Size:59K  ape
ap4438gsm-hf.pdf pdf_icon

AP4438GYT-HF

AP4438GSM-HFHalogen-Free ProductAdvanced Power N-CHANNEL MOSFET WITH SCHOTTKYElectronics Corp. DIODE Simple Drive Requirement BVDSS 30VDDD Good Recovery Time RDS(ON) 11.5mD Fast Switching Performance ID 11.7AGS RoHS Compliant & Halogen-FreeSSO-8SDDescriptionAdvanced Power MOSFETs from APEC provide theSchottky Diodedesigner with the best co

 7.2. Size:94K  ape
ap4438gm-hf.pdf pdf_icon

AP4438GYT-HF

AP4438GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDDD Simple Drive Requirement RDS(ON) 11.5mD Fast Switching Characteristic ID 11.8AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of

Otros transistores... AP4435GYT-HF , AP4436GM , AP4437GM-HF , AP4438AGM-HF , AP4438BGM-HF , AP4438CGM-HF , AP4438GM-HF , AP4438GSM-HF , 18N50 , AP4439GH-HF , AP4439GM-HF , AP4439GMT-HF , AP4451GH-HF , AP4451GM-HF , AP4451GYT-HF , AP4453GYT-HF , AP4455GEH-HF .

History: BRCS3400MA | 2SK2074 | APQ110SN5EA | AUIRFR2307ZTR | BRCS250N10SDP | 36N06 | CXDM3069N

 

 
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