AP4439GMT-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP4439GMT-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 18.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 490 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm

Encapsulados: PMPAK5X6

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AP4439GMT-HF datasheet

 ..1. Size:97K  ape
 ap4439gmt-hf.pdf pdf_icon

AP4439GMT-HF

AP4439GMT-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D SO-8 Compatible RDS(ON) 10m Lower Gate Charge ID -58A G RoHS Compliant & Halogen-Free S D Description D D AP4439 series are from Advanced Power innovated design and silicon D process technology to achieve the lowest p

 6.1. Size:93K  ape
 ap4439gm-hf.pdf pdf_icon

AP4439GMT-HF

AP4439GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D Lower On-resistance RDS(ON) 10m D Fast Switching Characteristic ID -13.3A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination

 7.1. Size:93K  ape
 ap4439gh-hf.pdf pdf_icon

AP4439GMT-HF

AP4439GH-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID -58A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D TO-

 9.1. Size:93K  ape
 ap4430gm-hf.pdf pdf_icon

AP4439GMT-HF

AP4430GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ultra_Low On-resistance BVDSS 35V D D D Simple Drive Requirement RDS(ON) 4.6m D Fast Switching Characteristic ID 20A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination

MOSTRAR MÁS

Otros transistores... AP4438AGM-HF, AP4438BGM-HF, AP4438CGM-HF, AP4438GM-HF, AP4438GSM-HF, AP4438GYT-HF, AP4439GH-HF, AP4439GM-HF, IRF1407, AP4451GH-HF, AP4451GM-HF, AP4451GYT-HF, AP4453GYT-HF, AP4455GEH-HF, AP4455GMT-HF, AP4455GYT-HF, AP4500GM