AP4451GH-HF Todos los transistores

 

AP4451GH-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4451GH-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 41.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 17 nC
   trⓘ - Tiempo de subida: 32 nS
   Cossⓘ - Capacitancia de salida: 360 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
   Paquete / Cubierta: TO252

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AP4451GH-HF Datasheet (PDF)

 ..1. Size:58K  ape
ap4451gh-hf.pdf

AP4451GH-HF
AP4451GH-HF

AP4451GH-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -45AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGbest combination of fast switching, rugged

 7.1. Size:95K  ape
ap4451gm-hf.pdf

AP4451GH-HF
AP4451GH-HF

AP4451GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDD Lower On-resistance RDS(ON) 14mDD Fast Switching Characteristic ID -11AG RoHS Compliant & Halogen-FreeSSSSO-8DDescriptionAP4451 series are from Advanced Power innovated design and siliconprocess technol

 7.2. Size:95K  ape
ap4451gyt-hf.pdf

AP4451GH-HF
AP4451GH-HF

AP4451GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Small Size & Lower Profile RDS(ON) 14.5m RoHS Compliant & Halogen-Free ID -13.1AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching, ruggedized device

 9.1. Size:150K  1
ap4453gyt.pdf

AP4451GH-HF
AP4451GH-HF

AP4453GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -30V Small Size & Lower Profile RDS(ON) 13m RoHS Compliant & Halogen-Free ID -12.8AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with the Dbest combination of fast switching, ruggedized device desi

 9.2. Size:94K  ape
ap4453agyt-hf.pdf

AP4451GH-HF
AP4451GH-HF

AP4453AGYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -30V Small Size & Lower Profile RDS(ON) 13m RoHS Compliant & Halogen-Free ID -12.8AGSDDDescriptionDAP4453A series are from Advanced Power innovated design andDsilicon process technology to achieve the lowest possible o

 9.3. Size:49K  ape
ap4455geh-hf.pdf

AP4451GH-HF
AP4451GH-HF

AP4455GEH-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Lower On-resistance RDS(ON) 21mG Fast Switching Characteristic ID -35A RoHS Compliant & Halogen-FreeSDescriptionGAdvanced Power MOSFETs from APEC provide

 9.4. Size:150K  ape
ap4453gyt.pdf

AP4451GH-HF
AP4451GH-HF

AP4453GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -30V Small Size & Lower Profile RDS(ON) 13m RoHS Compliant & Halogen-Free ID -12.8AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with the Dbest combination of fast switching, ruggedized device desi

 9.5. Size:205K  ape
ap4453h.pdf

AP4451GH-HF
AP4451GH-HF

AP4453HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -30V Simple Drive Requirement RDS(ON) 20m Fast Switching Characteristic ID -29.5AG RoHS Compliant & Halogen-FreeSDescriptionAP4453 series are from Advanced Power innovated design and GDSsilicon process technology to achieve the lo

 9.6. Size:182K  ape
ap4453m.pdf

AP4451GH-HF
AP4451GH-HF

AP4453MHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDDD Low On-resistance RDS(ON) 13m Fast Switching Characteristic ID -11.5AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAP4453 series are from Advanced Power innovated design and siliconprocess technology

 9.7. Size:59K  ape
ap4455gyt-hf.pdf

AP4451GH-HF
AP4451GH-HF

AP4455GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Small Size & Lower Profile RDS(ON) 21m RoHS Compliant & Halogen-Free ID -10.6AGDSDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching, ruggedized device de

 9.8. Size:118K  ape
ap4453gyt-hf.pdf

AP4451GH-HF
AP4451GH-HF

AP4453GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -30V Small Size & Lower Profile RDS(ON) 13m RoHS Compliant & Halogen-Free ID -12.8AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with the Dbest combination of fast switching, ruggedized device desi

 9.9. Size:95K  ape
ap4455gmt-hf.pdf

AP4451GH-HF
AP4451GH-HF

AP4455GMT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD SO-8 Compatible RDS(ON) 17.5m Lower Gate Charge ID -38.6AG RoHS Compliant & Halogen-FreeS DDescriptionDDAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching, ruggedi

 9.10. Size:112K  ape
ap4455gyt.pdf

AP4451GH-HF
AP4451GH-HF

AP4455GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Small Size & Lower Profile RDS(ON) 21m RoHS Compliant & Halogen-Free ID -10.6AGDSDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching, ruggedized device de

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