AP4451GYT-HF
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP4451GYT-HF
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.57
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 30
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 13.1
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5.5
nS
Cossⓘ - Capacitancia
de salida: 420
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0145
Ohm
Paquete / Cubierta:
PMPAK3X3
- Selección de transistores por parámetros
AP4451GYT-HF
Datasheet (PDF)
..1. Size:95K ape
ap4451gyt-hf.pdf 
AP4451GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Small Size & Lower Profile RDS(ON) 14.5m RoHS Compliant & Halogen-Free ID -13.1AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching, ruggedized device
7.1. Size:95K ape
ap4451gm-hf.pdf 
AP4451GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDD Lower On-resistance RDS(ON) 14mDD Fast Switching Characteristic ID -11AG RoHS Compliant & Halogen-FreeSSSSO-8DDescriptionAP4451 series are from Advanced Power innovated design and siliconprocess technol
7.2. Size:58K ape
ap4451gh-hf.pdf 
AP4451GH-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -45AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGbest combination of fast switching, rugged
9.1. Size:150K 1
ap4453gyt.pdf 
AP4453GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -30V Small Size & Lower Profile RDS(ON) 13m RoHS Compliant & Halogen-Free ID -12.8AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with the Dbest combination of fast switching, ruggedized device desi
9.2. Size:94K ape
ap4453agyt-hf.pdf 
AP4453AGYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -30V Small Size & Lower Profile RDS(ON) 13m RoHS Compliant & Halogen-Free ID -12.8AGSDDDescriptionDAP4453A series are from Advanced Power innovated design andDsilicon process technology to achieve the lowest possible o
9.3. Size:49K ape
ap4455geh-hf.pdf 
AP4455GEH-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Lower On-resistance RDS(ON) 21mG Fast Switching Characteristic ID -35A RoHS Compliant & Halogen-FreeSDescriptionGAdvanced Power MOSFETs from APEC provide
9.4. Size:150K ape
ap4453gyt.pdf 
AP4453GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -30V Small Size & Lower Profile RDS(ON) 13m RoHS Compliant & Halogen-Free ID -12.8AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with the Dbest combination of fast switching, ruggedized device desi
9.5. Size:205K ape
ap4453h.pdf 
AP4453HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -30V Simple Drive Requirement RDS(ON) 20m Fast Switching Characteristic ID -29.5AG RoHS Compliant & Halogen-FreeSDescriptionAP4453 series are from Advanced Power innovated design and GDSsilicon process technology to achieve the lo
9.6. Size:182K ape
ap4453m.pdf 
AP4453MHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDDD Low On-resistance RDS(ON) 13m Fast Switching Characteristic ID -11.5AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAP4453 series are from Advanced Power innovated design and siliconprocess technology
9.7. Size:59K ape
ap4455gyt-hf.pdf 
AP4455GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Small Size & Lower Profile RDS(ON) 21m RoHS Compliant & Halogen-Free ID -10.6AGDSDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching, ruggedized device de
9.8. Size:118K ape
ap4453gyt-hf.pdf 
AP4453GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -30V Small Size & Lower Profile RDS(ON) 13m RoHS Compliant & Halogen-Free ID -12.8AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with the Dbest combination of fast switching, ruggedized device desi
9.9. Size:95K ape
ap4455gmt-hf.pdf 
AP4455GMT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD SO-8 Compatible RDS(ON) 17.5m Lower Gate Charge ID -38.6AG RoHS Compliant & Halogen-FreeS DDescriptionDDAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching, ruggedi
9.10. Size:112K ape
ap4455gyt.pdf 
AP4455GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Small Size & Lower Profile RDS(ON) 21m RoHS Compliant & Halogen-Free ID -10.6AGDSDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching, ruggedized device de
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