AP4455GYT-HF Todos los transistores

 

AP4455GYT-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP4455GYT-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.57 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 280 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.021 Ohm

Encapsulados: PMPAK3X3

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AP4455GYT-HF datasheet

 ..1. Size:59K  ape
ap4455gyt-hf.pdf pdf_icon

AP4455GYT-HF

AP4455GYT-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Small Size & Lower Profile RDS(ON) 21m RoHS Compliant & Halogen-Free ID -10.6A G D S D Description D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switching, ruggedized device de

 5.1. Size:112K  ape
ap4455gyt.pdf pdf_icon

AP4455GYT-HF

AP4455GYT-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Small Size & Lower Profile RDS(ON) 21m RoHS Compliant & Halogen-Free ID -10.6A G D S D Description D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switching, ruggedized device de

 7.1. Size:49K  ape
ap4455geh-hf.pdf pdf_icon

AP4455GYT-HF

AP4455GEH-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Lower On-resistance RDS(ON) 21m G Fast Switching Characteristic ID -35A RoHS Compliant & Halogen-Free S Description G Advanced Power MOSFETs from APEC provide

 7.2. Size:95K  ape
ap4455gmt-hf.pdf pdf_icon

AP4455GYT-HF

AP4455GMT-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D SO-8 Compatible RDS(ON) 17.5m Lower Gate Charge ID -38.6A G RoHS Compliant & Halogen-Free S D Description D D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switching, ruggedi

Otros transistores... AP4439GM-HF , AP4439GMT-HF , AP4451GH-HF , AP4451GM-HF , AP4451GYT-HF , AP4453GYT-HF , AP4455GEH-HF , AP4455GMT-HF , 18N50 , AP4500GM , AP4500GM-HF , AP4500GYT-HF , AP4501AGEM-HF , AP4501AGEY-HF , AP4501AGM-HF , AP4501CGM-HF , AP4501GD .

History: 2SK1941 | ME3205T | MTA50P01SN3

 

 

 


History: 2SK1941 | ME3205T | MTA50P01SN3

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