AP4500GYT-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP4500GYT-HF
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 8.9(5.3) A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 VQgⓘ - Carga de la puerta: 8 nC
trⓘ - Tiempo de subida: 10(15) nS
Cossⓘ - Capacitancia de salida: 140(125) pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.021(0.06) Ohm
Paquete / Cubierta: PMPAK3X3
Búsqueda de reemplazo de MOSFET AP4500GYT-HF
AP4500GYT-HF Datasheet (PDF)
ap4500gyt-hf.pdf
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ap4503agm-hf.pdf
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ap4502gm-hf.pdf
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ap4501gm-hf.pdf
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ap4502agm-hf.pdf
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ap4503gm-hf.pdf
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ap4506geh.pdf
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ap4503gm.pdf
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