AP4501AGEY-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP4501AGEY-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.5(4.5) A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 80(100) pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0159(0.045) Ohm
   Paquete / Cubierta: 2928-8

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AP4501AGEY-HF Datasheet (PDF)

..1. Size:124K ape
ap4501agey-hf.pdf

AP4501AGEY-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD2D2 Low On-resistance RDS(ON) 20mD1D1G2 Fast Switching Performance ID 6.5AS2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VG1S12928-8RDS(ON) 45mDescription ID -4.5AAP4501A series are from Advan

5.1. Size:125K ape
ap4501agem-hf.pdf

AP4501AGEM-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD2D2 Low On-resistance RDS(ON) 20mD1D1 Fast Switching Performance ID 8AG2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VS2G1S1SO-8RDS(ON) 60mDescription ID -4.6AAdvanced Power MOSFETs from APEC

6.1. Size:118K ape
ap4501agm.pdf

AP4501AGMRoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD2D2 Low On-resistance D1 RDS(ON) 28mD1 Fast Switching Performance ID 7AG2S2 P-CH BVDSS -30VG1S1SO-8RDS(ON) 50mDescription ID -5.3AAdvanced Power MOSFETs from APEC provide thedesigner with the best co

6.2. Size:120K ape
ap4501agm-hf.pdf

AP4501AGM-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD2D2 Low On-resistance RDS(ON) 28mD1D1 Fast Switching Performance ID 7AG2 RoHS Compliant P-CH BVDSS -30VS2G1S1RDS(ON) 50mSO-8Description ID -5.3AAdvanced Power MOSFETs from APEC provide the desi

6.3. Size:891K cn vbsemi
ap4501agm.pdf

AP4501AGMwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VG

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