AP4501CGM-HF Todos los transistores

 

AP4501CGM-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP4501CGM-HF

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7(4) A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8(9.5) nS

Cossⓘ - Capacitancia de salida: 65 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025(0.08) Ohm

Encapsulados: SO8

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AP4501CGM-HF datasheet

 ..1. Size:120K  ape
ap4501cgm-hf.pdf pdf_icon

AP4501CGM-HF

AP4501CGM-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30V D2 D2 Low Gate Charge D1 RDS(ON) 25m D1 Fast Switching Performance ID 7A G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30V G1 S1 SO-8 RDS(ON) 80m Description ID -4A Advanced Power MOSFETs from APEC provid

 8.1. Size:84K  ape
ap4501gd.pdf pdf_icon

AP4501CGM-HF

AP4501GD Pb Free Plating Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low Gate Charge N-CH BVDSS 30V D2 D2 D1 Fast Switching Speed RDS(ON) 28m D1 PDIP-8 Package ID 7A RoHS Compliant P-CH BVDSS -30V G2 S2 RDS(ON) 50m PDIP-8 G1 S1 ID -5.3A Description The Advanced Power MOSFETs from APEC provide the designer with t

 8.2. Size:125K  ape
ap4501agem-hf.pdf pdf_icon

AP4501CGM-HF

AP4501AGEM-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30V D2 D2 Low On-resistance RDS(ON) 20m D1 D1 Fast Switching Performance ID 8A G2 RoHS Compliant & Halogen-Free P-CH BVDSS -30V S2 G1 S1 SO-8 RDS(ON) 60m Description ID -4.6A Advanced Power MOSFETs from APEC

 8.3. Size:118K  ape
ap4501agm.pdf pdf_icon

AP4501CGM-HF

AP4501AGM RoHS-compliant Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30V D2 D2 Low On-resistance D1 RDS(ON) 28m D1 Fast Switching Performance ID 7A G2 S2 P-CH BVDSS -30V G1 S1 SO-8 RDS(ON) 50m Description ID -5.3A Advanced Power MOSFETs from APEC provide the designer with the best co

Otros transistores... AP4455GMT-HF , AP4455GYT-HF , AP4500GM , AP4500GM-HF , AP4500GYT-HF , AP4501AGEM-HF , AP4501AGEY-HF , AP4501AGM-HF , 8N60 , AP4501GD , AP4501GH-HF , AP4501GM , AP4501GSD , AP4502AGM-HF , AP4502GM , AP4503AGEM-HF , AP4503AGM-HF .

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