AP4501CGM-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP4501CGM-HF
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7(4) A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 VQgⓘ - Carga de la puerta: 4.6 nC
trⓘ - Tiempo de subida: 8(9.5) nS
Cossⓘ - Capacitancia de salida: 65 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025(0.08) Ohm
Paquete / Cubierta: SO8
AP4501CGM-HF Datasheet (PDF)
ap4501cgm-hf.pdf

AP4501CGM-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD2D2 Low Gate Charge D1 RDS(ON) 25mD1 Fast Switching Performance ID 7AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VG1S1SO-8RDS(ON) 80mDescription ID -4AAdvanced Power MOSFETs from APEC provid
ap4501gd.pdf

AP4501GDPb Free Plating ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Low Gate Charge N-CH BVDSS 30VD2D2D1 Fast Switching Speed RDS(ON) 28mD1 PDIP-8 Package ID 7A RoHS Compliant P-CH BVDSS -30VG2S2RDS(ON) 50mPDIP-8G1S1ID -5.3ADescriptionThe Advanced Power MOSFETs from APEC provide thedesigner with t
ap4501agem-hf.pdf

AP4501AGEM-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD2D2 Low On-resistance RDS(ON) 20mD1D1 Fast Switching Performance ID 8AG2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VS2G1S1SO-8RDS(ON) 60mDescription ID -4.6AAdvanced Power MOSFETs from APEC
ap4501agm.pdf

AP4501AGMRoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD2D2 Low On-resistance D1 RDS(ON) 28mD1 Fast Switching Performance ID 7AG2S2 P-CH BVDSS -30VG1S1SO-8RDS(ON) 50mDescription ID -5.3AAdvanced Power MOSFETs from APEC provide thedesigner with the best co
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: NCE0224D | CSI460 | BLM9435 | STB85NF3LLT4 | FQI9N08TU | JFPC5N65C | 2SK2740
History: NCE0224D | CSI460 | BLM9435 | STB85NF3LLT4 | FQI9N08TU | JFPC5N65C | 2SK2740



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