AP4501CGM-HF Todos los transistores

 

AP4501CGM-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4501CGM-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7(4) A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8(9.5) nS
   Cossⓘ - Capacitancia de salida: 65 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025(0.08) Ohm
   Paquete / Cubierta: SO8
 

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AP4501CGM-HF Datasheet (PDF)

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 ap4501cgm-hf.pdf pdf_icon

AP4501CGM-HF

AP4501CGM-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD2D2 Low Gate Charge D1 RDS(ON) 25mD1 Fast Switching Performance ID 7AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VG1S1SO-8RDS(ON) 80mDescription ID -4AAdvanced Power MOSFETs from APEC provid

 8.1. Size:84K  ape
 ap4501gd.pdf pdf_icon

AP4501CGM-HF

AP4501GDPb Free Plating ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Low Gate Charge N-CH BVDSS 30VD2D2D1 Fast Switching Speed RDS(ON) 28mD1 PDIP-8 Package ID 7A RoHS Compliant P-CH BVDSS -30VG2S2RDS(ON) 50mPDIP-8G1S1ID -5.3ADescriptionThe Advanced Power MOSFETs from APEC provide thedesigner with t

 8.2. Size:125K  ape
 ap4501agem-hf.pdf pdf_icon

AP4501CGM-HF

AP4501AGEM-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD2D2 Low On-resistance RDS(ON) 20mD1D1 Fast Switching Performance ID 8AG2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VS2G1S1SO-8RDS(ON) 60mDescription ID -4.6AAdvanced Power MOSFETs from APEC

 8.3. Size:118K  ape
 ap4501agm.pdf pdf_icon

AP4501CGM-HF

AP4501AGMRoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD2D2 Low On-resistance D1 RDS(ON) 28mD1 Fast Switching Performance ID 7AG2S2 P-CH BVDSS -30VG1S1SO-8RDS(ON) 50mDescription ID -5.3AAdvanced Power MOSFETs from APEC provide thedesigner with the best co

MOSTRAR MÁS

Otros transistores... AP4455GMT-HF , AP4455GYT-HF , AP4500GM , AP4500GM-HF , AP4500GYT-HF , AP4501AGEM-HF , AP4501AGEY-HF , AP4501AGM-HF , 8N60 , AP4501GD , AP4501GH-HF , AP4501GM , AP4501GSD , AP4502AGM-HF , AP4502GM , AP4503AGEM-HF , AP4503AGM-HF .

History: AP4501GD | 2SK2619 | TK28N65W | HX3415 | IRF50N06 | AP4501GH-HF

 

 
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