AP4503AGM-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP4503AGM-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.9(6.3) A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 8.4 nC
   trⓘ - Tiempo de subida: 8(7) nS
   Cossⓘ - Capacitancia de salida: 80(150) pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028(0.036) Ohm
   Paquete / Cubierta: SO8

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AP4503AGM-HF Datasheet (PDF)

..1. Size:84K ape
ap4503agm-hf.pdf

AP4503AGM-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement D2 N-CH BVDSS 30VD2 Low On-resistance D1 RDS(ON) 28mD1 Fast Switching Performance ID 6.9AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VG1S1SO-8RDS(ON) 36mDescription ID -6.3AAdvanced Power MOSFETs from APEC p

6.1. Size:201K ape
ap4503agem.pdf

AP4503AGEM-HFHalogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD2D2 Lower Gate Charge RDS(ON) 26mD1D1 Fast Switching Performance ID 7AG2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VS2G1S1SO-8RDS(ON)

6.2. Size:120K ape
ap4503agem-hf.pdf

AP4503AGEM-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD2D2 Lower Gate Charge RDS(ON) 26mD1D1 Fast Switching Performance ID 7AG2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VS2G1S1SO-8RDS(ON) 52mDescription ID -5AAP4503A series are from Advanced Po

8.1. Size:146K ape
ap4503bgo-hf.pdf

AP4503BGO-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement G2 N-CH BVDSS 30VS2S2D2 Lower Gate Charge RDS(ON) 23mG1 Fast Switching Performance S1 ID 6.3AS1TSSOP-8 D1 RoHS Compliant & Halogen-Free P-CH BVDSS -30VRDS(ON) 35mDescription ID -5.2AAdvanced Power MOSFETs from APEC

8.2. Size:118K ape
ap4503bgm-hf.pdf

AP4503BGM-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement D2 N-CH BVDSS 30VD2 Lower Gate Charge D1 RDS(ON) 18mD1 Fast Switching Performance ID 8.2AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VG1S1SO-8RDS(ON) 29mDescription ID -6.6AAdvanced Power MOSFETs from APEC p

8.3. Size:121K ape
ap4503gm.pdf

AP4503GMRoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD2D2 Low On-resistance RDS(ON) 28mD1D1 Fast Switching Performance ID 6.9AG2S2P-CH BVDSS -30VG1S1SO-8RDS(ON) 36mDescription ID -6.3AAdvanced Power MOSFETs from APEC provide thedesigner with the best

8.4. Size:122K ape
ap4503gm-hf.pdf

AP4503GM-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD2D2 Low On-resistance RDS(ON) 28mD1D1 Fast Switching Performance ID 6.9AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VG1SO-8 S1RDS(ON) 36mDescription ID -6.3AAdvanced Power MOSFETs from APEC p

8.5. Size:964K cn vbsemi
ap4503gm.pdf

AP4503GMwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VGS

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