AP4509AGH-HF Todos los transistores

 

AP4509AGH-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP4509AGH-HF

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.13 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 14(9.5) A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7(6) nS

Cossⓘ - Capacitancia de salida: 220(210) pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01(0.023) Ohm

Encapsulados: TO252-4L

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AP4509AGH-HF datasheet

 ..1. Size:119K  ape
 ap4509agh-hf.pdf pdf_icon

AP4509AGH-HF

AP4509AGH-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30V D1/D2 Good Thermal Performance RDS(ON) 10m Fast Switching Performance ID 14A S1 RoHS Compliant & Halogen-Free P-CH BVDSS -30V G1 S2 RDS(ON) 23m G2 Description ID -9.5A TO-252-4L Advanced Power MOSFETs from AP

 6.1. Size:120K  ape
 ap4509agm-hf.pdf pdf_icon

AP4509AGH-HF

AP4509AGM-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30V D2 D2 Low Gate Charge D1 RDS(ON) 10m D1 Fast Switching Performance ID 11.2A G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30V G1 S1 SO-8 RDS(ON) 21m Description ID -8A Advanced Power MOSFETs from APEC pro

 8.1. Size:197K  ape
 ap4509gm.pdf pdf_icon

AP4509AGH-HF

AP4509GM-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30V D2 D2 Low On-resistance RDS(ON) 14m D1 D1 Fast Switching Performance ID 10A G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30V G1 S1 SO-8 RDS(ON) 2

 8.2. Size:83K  ape
 ap4509gm-hf.pdf pdf_icon

AP4509AGH-HF

AP4509GM-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30V D2 D2 Low On-resistance RDS(ON) 14m D1 D1 Fast Switching Performance ID 10A G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30V G1 S1 SO-8 RDS(ON) 20m Description ID -8.4A Advanced Power MOSFETs from APEC p

MOSTRAR MÁS

Otros transistores... AP4503AGEM-HF , AP4503AGM-HF , AP4503BGM-HF , AP4503BGO-HF , AP4503GM , AP4506GEH , AP4506GEH-HF , AP4506GEM-HF , K2611 , AP4509AGM-HF , AP4509GM-HF , AP4511GD , AP4511GED-HF , AP4511GH , AP4511GH-A , AP4511GM-HF , AP4513GD .

History: BUZ380 | BSR302N | 2SK2673 | SI4435DY-T1-E3 | AFN4172WSS8 | SL20N03

 

 

 

 

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