AP4521GEH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP4521GEH
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 9 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 11.7(8.7) A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 VQgⓘ - Carga de la puerta: 7.4 nC
trⓘ - Tiempo de subida: 19.3(17) nS
Cossⓘ - Capacitancia de salida: 90(80) pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.036(0.072) Ohm
Paquete / Cubierta: TO252-4L
Búsqueda de reemplazo de MOSFET AP4521GEH
AP4521GEH Datasheet (PDF)
ap4521geh.pdf
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ap4521gem.pdf
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ap4526agh-hf.pdf
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ap4527gn3.pdf
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ap4525geh-hf.pdf
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ap4525geh.pdf
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ap4526gh.pdf
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ap4529gh.pdf
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ap4527gh.pdf
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ap4525gem.pdf
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ap4525gem-hf.pdf
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ap4528gm.pdf
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ap4528gh.pdf
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ap4525geh.pdf
AP4525GEHwww.VBsemi.twN- and P-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETN-CHANNEL P-CHANNELd 100 % Rg and UIS TestedVDS (V) 40 - 40RDS(on) () at VGS = 10 V 0.014 0.014RDS(on) () at VGS = 4.5 V 0.016 0.016APPLICATIONSID (A) 50 - 50 CCFL InverterConfiguration N- and P-PairTO-252-4L D-PAK D1/D2 D1/D2 Top V
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918