AP4531GH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP4531GH
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7.4(4.7) A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15(13.5) nS
Cossⓘ - Capacitancia de salida: 70(60) pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.032(0.09) Ohm
Paquete / Cubierta: TO252-4L
Búsqueda de reemplazo de MOSFET AP4531GH
AP4531GH Datasheet (PDF)
ap4531gh.pdf
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ap4531gm.pdf
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ap4539gm-hf.pdf
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ap4533geh-hf ape4533geh-hf.pdf
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ap4532gm-hf.pdf
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ap4532gm.pdf
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ap4530gh.pdf
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ap4537gyt-hf.pdf
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ap4530gm.pdf
AP4530GMRoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40VD2D2 Fast Switching Performance RDS(ON) 36mD1D1 Lower Gate Charge ID 5.7AG2S2P-CH BVDSS -40VG1S1SO-8RDS(ON) 68mDescription ID -4.2AAdvanced Power MOSFETs from APEC provide the designer withthe best
ap4533gem-hf.pdf
AP4533GEM-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD2D2D1 Lower Gate Charge RDS(ON) 18mD1 Fast Switching Performance ID 8.4AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VG1S1SO-8RDS(ON) 36mDescription ID -6AAdvanced Power MOSFETs from APEC p
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