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2SK620 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK620
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 5 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 50 Ohm
   Paquete / Cubierta: TO236 SC59
 

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2SK620 Datasheet (PDF)

 ..1. Size:35K  panasonic
2sk620.pdf pdf_icon

2SK620

Silicon MOS FETs (Small Signal) 2SK6202SK620Silicon N-Channel MOSUnit : mmFor switching+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15 Features High-speed switching1 Downsizing of sets by mini-type package and automatic insertion bytaping/magazine packing are available.32 Absolute Maximum Ratings (Ta = 25C)0.1 to 0.3Parameter Symbol Rating Unit0.4

 9.1. Size:236K  inchange semiconductor
2sk622.pdf pdf_icon

2SK620

isc N-Channel MOSFET Transistor 2SK622DESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =150V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for low voltage,high speed applications,such as off-line switching power supplies

 9.2. Size:241K  inchange semiconductor
2sk627.pdf pdf_icon

2SK620

isc N-Channel MOSFET Transistor 2SK627FEATURESDrain Current I =20A@ T =25D CDrain Source Voltage-: V = 50V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for low voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay dri

 9.3. Size:241K  inchange semiconductor
2sk629.pdf pdf_icon

2SK620

isc N-Channel MOSFET Transistor 2SK629FEATURESDrain Current I =20A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

Otros transistores... 2SK559 , 2SK560 , 2SK578 , 2SK579L , 2SK580L , 2SK579S , 2SK580S , 2SK583 , NCEP15T14 , 2SK655 , 2SK656 , 2SK657 , AP4569GH , AP4569GM , AP4575GH-HF , AP4575GM-HF , AP4578GD .

History: AP4569GM | SFS12R08PNF | 2SK1313S | 2SK1186

 

 
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History: AP4569GM | SFS12R08PNF | 2SK1313S | 2SK1186

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