2SK656 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK656
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Cossⓘ - Capacitancia de salida: 4.5 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 50 Ohm
   Paquete / Cubierta: SC72

Búsqueda de reemplazo de MOSFET 2SK656

2SK656 Datasheet (PDF)

..1. Size:32K panasonic
2sk656.pdf

Silicon MOS FETs (Small Signal) 2SK6562SK656Silicon N-Channel MOSUnit : mmFor switching4.0 0.2 Features High-speed switching Small drive current owing to high input impedance Extremely high electrostatic destruction voltagemarking1 2 3 Absolute Maximum Ratings (Ta = 25C)1.27 1.27Symbol UnitParameter Rating2.54 0.151 : SourceVDS VDrain-Source voltage 5

9.1. Size:136K nec
2sk654.pdf

9.2. Size:135K nec
2sk659.pdf

9.3. Size:33K panasonic
2sk655.pdf

Silicon MOS FETs (Small Signal) 2SK6552SK655Silicon N-Channel MOSUnit : mmFor switching4.0 0.2 Features High-speed switching Radial taping possiblemarking1 2 3 Absolute Maximum Ratings (Ta = 25C)1.27 1.27Symbol UnitParameter Rating2.54 0.151 : SourceVDS VDrain-Source voltage 502 : DrainVGSO VGate-Source voltage 83 : GateID mADrain current

9.4. Size:35K panasonic
2sk657.pdf

Silicon MOS FETs (Small Signal) 2SK6572SK657Silicon N-Channel MOSUnit : mmFor switching6.9 0.1 2.5 0.11.51.5 R0.9 1.0 FeaturesR0.9 High-speed switching Easy automatic- /manual-insertion due to M type package. Self-fix-ing to printed circuits board.0.850.55 0.1 0.45 0.053 2 1 Absolute Maximum Ratings (Ta = 25C)SymbolParameter Rating Unit2.5 2.51

9.5. Size:30K panasonic
2sk65.pdf

Silicon Junction FETs (Small Signal) 2SK652SK65Silicon N-Channel JunctionUnit : mm4.5 0.1 2.0 0.2For impedance conversion in low frequency1.0For electret capacitor microphone Features Diode connected between gate and source Low noise voltage0.45 0.05 Absolute Maximum Ratings (Ta = 25C)2.54 0.8 0.1Parameter Symbol Rating Unit1 2 31 : DrainDrain-Source

9.6. Size:278K inchange semiconductor
2sk659.pdf

isc N-Channel MOSFET Transistor 2SK659FEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 75m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

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