AP4569GH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP4569GH
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10.5(8) A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 8.8(7.6) nS
   Cossⓘ - Capacitancia de salida: 70(80) pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.042(0.075) Ohm
   Paquete / Cubierta: TO252-4L

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AP4569GH Datasheet (PDF)

..1. Size:117K ape
ap4569gh.pdf

AP4569GHPb Free Plating ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40VD1/D2 Good Thermal Performance RDS(ON) 42m Fast Switching Performance ID 10.5AS1G1 RoHS Compliant P-CH BVDSS -40VS2G2RDS(ON) 75mTO-252-4LDescription ID -8AThe Advanced Power MOSFETs from APEC provide t

7.1. Size:115K ape
ap4569gm.pdf

AP4569GMPb Free Plating ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40VD2D2 Fast Switching Performance RDS(ON) 36mD1D1 RoHS Compliant ID 5.8AG2P-CH BVDSS -40VS2G1S1SO-8RDS(ON) 68mDescription ID -4.2AThe Advanced Power MOSFETs from APEC provide thedesigner with the be

7.2. Size:96K ape
ap4569gd.pdf

AP4569GDPb Free Plating ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2Low Gate Charge N-CH BVDSS 40V D2D1D1 Fast Switching Speed RDS(ON) 52m PDIP-8 Package ID 4.8AG2 RoHS Compliant P-CH BVDSS -40VS2PDIP-8G1RDS(ON) 90mS1Description ID -3.8AThe

9.1. Size:136K ape
ap4563gh.pdf

AP4563GH-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40VD1/D2 Good Thermal Performance RDS(ON) 30m Fast Switching Performance ID 8AS1G1S2 RoHS Compliant P-CH BVDSS -40VG2RDS(ON) 36mTO-252-4LDescription ID -7.3AAdvanced Power MOSFETs from APEC provide the de

9.2. Size:94K ape
ap4565gm.pdf

AP4565GMPb Free Plating ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETSimple Drive Requirement N-CH BVDSS 40V D2D2D2Low On-resistance D2 RDS(ON) 25m D1D1D1D1Fast Switching Performance ID 7.6A G2G2P-CH BVDSS -40VS2S2G1SO-8 S1G1RDS(ON) 33mSO-8 S1Descri

9.3. Size:84K ape
ap4563gm.pdf

AP4563GMPb Free Plating ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40VD2D2 Fast Switching Performance RDS(ON) 30mD1D1 RoHS Compliant ID 6.7AG2P-CH BVDSS -40VS2G1S1SO-8RDS(ON) 36mDescription ID -6AThe Advanced Power MOSFETs from APEC provide thedesigner with the best

9.4. Size:120K ape
ap4563gh-hf.pdf

9.5. Size:119K ape
ap4563agh-hf.pdf

AP4563AGH-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40VD1/D2 Good Thermal Performance RDS(ON) 20m Fast Switching Performance ID 9.6AS1 RoHS Compliant & Halogen-Free P-CH BVDSS -40VG1S2RDS(ON) 36mG2Description ID -7.3ATO-252-4LD1D2Advanced Power MOSFE

9.6. Size:135K ape
ap4563agh.pdf

9.7. Size:890K cn vbsemi
ap4565gm-30v.pdf

AP4565GM&-30Vwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 a

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