AP4800AGM-HF Todos los transistores

 

AP4800AGM-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP4800AGM-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 9.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 155 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm

Encapsulados: SO8

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AP4800AGM-HF datasheet

 ..1. Size:93K  ape
 ap4800agm-hf.pdf pdf_icon

AP4800AGM-HF

AP4800AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Low On-resistance RDS(ON) 18m D D Fast Switching Characteristic ID 9.6A G RoHS Compliant S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

 5.1. Size:93K  ape
 ap4800agm.pdf pdf_icon

AP4800AGM-HF

AP4800AGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Low On-resistance RDS(ON) 18m D D Fast Switching Characteristic ID 9.6A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device de

 8.1. Size:80K  ape
 ap4800gm.pdf pdf_icon

AP4800AGM-HF

AP4800GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 25V D D Fast Switching D RDS(ON) 18m D Simple Drive Requirement ID 9A G S S SO-8 S Description D D The Advanced Power MOSFETs from APEC provide the designer with the best combination of

 8.2. Size:94K  ape
 ap4800dgm-hf.pdf pdf_icon

AP4800AGM-HF

AP4800DGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 18m D Fast Switching Characteristic ID 9A G S RoHS Compliant & Halogen-Free S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fas

MOSTRAR MÁS

Otros transistores... 2SK657 , AP4569GH , AP4569GM , AP4575GH-HF , AP4575GM-HF , AP4578GD , AP4578GH-HF , AP4578GM-HF , 10N65 , AP4800BGM-HF , AP4800CGM-HF , AP4800DGM-HF , AP4800GM , AP4800GYT-HF , AP4810GSM , AP4813GSM-HF , AP4813GYT-HF .

History: SED4060GM | P120NF10 | 2SK3705 | STD30PF03LT4 | AGM405F | FCP099N65S3 | 2SK1228

 

 

 

 

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