2SK2654-01 Todos los transistores

 

2SK2654-01 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK2654-01

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 120 nS

Cossⓘ - Capacitancia de salida: 180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.48 Ohm

Encapsulados: TO3P

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2SK2654-01 datasheet

 ..1. Size:267K  fuji
 2sk2654-01.pdf pdf_icon

2SK2654-01

N-channel MOS-FET 2SK2654-01 FAP-IIS Series 900V 2 8A 150W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristic

 7.1. Size:257K  inchange semiconductor
 2sk2654.pdf pdf_icon

2SK2654-01

isc N-Channel MOSFET Transistor 2SK2654 FEATURES Drain Source Voltage- V = 900V(Min) DSS Static Drain-Source On-Resistance R = 2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =

 8.1. Size:30K  panasonic
 2sk2659.pdf pdf_icon

2SK2654-01

Power F-MOS FETs 2SK2659 2SK2659 Silicon N-Channel Power F-MOS Unit mm 5.0 0.1 Features 10.0 0.2 1.0 Avalanche energy capability guaranteed High-speed switching 90 Low ON-resistance No secondary breakdown 1.2 0.1 C1.0 2.25 0.2 Low-voltage drive 0.65 0.1 0.35 0.1 1.05 0.1 Radial taping possible 0.55 0.1 0.55 0.1 Applications Non-contact relay No

 8.2. Size:304K  fuji
 2sk2653-01r.pdf pdf_icon

2SK2654-01

N-channel MOS-FET 2SK2653-01R FAP-IIS Series 900V 2,5 6A 80W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characterist

MOSTRAR MÁS

Otros transistores... AP4813GYT-HF , AP4820AGYT-HF , AP4820GYT-HF , AP4835GM , AP4835GMT-HF , 2SK1940-01 , 2SK2552 , 2SK2645-01MR , IRFB31N20D , 2SK2761-01MR , 2SK2765-01 , 2SK3496-01MR , 2SK3683-01MR , 2SK4075 , 2SK659 , AP4880BGM-HF , AP4880GM .

History: AGM405A | AO4408 | NCE4606 | SI2307DS | 2N6659X | STG8820 | RD3P200SNFRA

 

 

 

 

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