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2SK2654-01 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK2654-01
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   trⓘ - Tiempo de subida: 120 nS
   Cossⓘ - Capacitancia de salida: 180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.48 Ohm
   Paquete / Cubierta: TO3P
 

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2SK2654-01 Datasheet (PDF)

 ..1. Size:267K  fuji
 2sk2654-01.pdf pdf_icon

2SK2654-01

N-channel MOS-FET2SK2654-01FAP-IIS Series 900V 2 8A 150W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristic

 7.1. Size:257K  inchange semiconductor
 2sk2654.pdf pdf_icon

2SK2654-01

isc N-Channel MOSFET Transistor 2SK2654FEATURESDrain Source Voltage-: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies andgeneral purpose applications.ABSOLUTE MAXIMUM RATINGS(T =

 8.1. Size:30K  panasonic
 2sk2659.pdf pdf_icon

2SK2654-01

Power F-MOS FETs 2SK26592SK2659Silicon N-Channel Power F-MOSUnit : mm5.0 0.1 Features10.0 0.2 1.0 Avalanche energy capability guaranteed High-speed switching90 Low ON-resistance No secondary breakdown 1.2 0.1 C1.02.25 0.2 Low-voltage drive0.65 0.10.35 0.1 1.05 0.1 Radial taping possible0.55 0.10.55 0.1 ApplicationsNon-contact relayNo

 8.2. Size:304K  fuji
 2sk2653-01r.pdf pdf_icon

2SK2654-01

N-channel MOS-FET2SK2653-01RFAP-IIS Series 900V 2,5 6A 80W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characterist

MOSTRAR MÁS

Otros transistores... AP4813GYT-HF , AP4820AGYT-HF , AP4820GYT-HF , AP4835GM , AP4835GMT-HF , 2SK1940-01 , 2SK2552 , 2SK2645-01MR , IRF730 , 2SK2761-01MR , 2SK2765-01 , 2SK3496-01MR , 2SK3683-01MR , 2SK4075 , 2SK659 , AP4880BGM-HF , AP4880GM .

History: LSB55R050GT | HM10P10D

 

 
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