AP55T06GS-HF Todos los transistores

 

AP55T06GS-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP55T06GS-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 39 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 32.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 44 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: TO263
 

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AP55T06GS-HF Datasheet (PDF)

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 ap55t06gs-hf.pdf pdf_icon

AP55T06GS-HF

AP55T06GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 18m RoHS Compliant & Halogen-Free ID 32.4AGSDescriptionAP55T06 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-Gresistance and

 6.1. Size:59K  ape
 ap55t06gi-hf.pdf pdf_icon

AP55T06GS-HF

AP55T06GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 18m RoHS Compliant & Halogen-Free ID 29AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-Gresist

 6.2. Size:164K  ape
 ap55t06gi.pdf pdf_icon

AP55T06GS-HF

AP55T06GI-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 18m RoHS Compliant & Halogen-Free ID 29AGSDescriptionAP55T06 series are from Advanced Power innovated design andsilicon process technology to achiev

 9.1. Size:58K  ape
 ap55t10gp-hf.pdf pdf_icon

AP55T06GS-HF

AP55T10GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristic ID 56AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedi

MOSTRAR MÁS

Otros transistores... AP50T10GP-HF , AP50T10GS-HF , AP5321GM-HF , AP5322GM-HF , AP5331GM-HF , AP5521GH-HF , AP5521GM-HF , AP55T06GI-HF , IRFB4110 , AP55T10GH-HF , AP55T10GI-HF , AP55T10GP-HF , AP55T10GS-HF , AP60N03GH , AP60N03GJ , AP60N03GP , AP60N03GS .

History: KI2304DS | HSU80N03 | IPB120P04P4L-03

 

 
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