AP60T03GJ-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP60T03GJ-HF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 44 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 45 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de subida (tr): 58 nS
Conductancia de drenaje-sustrato (Cd): 200 pF
Resistencia entre drenaje y fuente RDS(on): 0.012 Ohm
Paquete / Cubierta: TO251
Búsqueda de reemplazo de MOSFET AP60T03GJ-HF
AP60T03GJ-HF Datasheet (PDF)
ap60t03gh j ap60t03gj ap60t03gh.pdf
AP60T03GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 12m Fast Switching Characteristic ID 45AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design,
ap60t03gh.pdf
AP60T03GH-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Low Gate Charge RDS(ON) 12m Fast Switching Characteristic ID 45AG RoHS Compliant & Halogen-FreeSDescriptionAP60T03 series are from Advanced Power innovated d
ap60t03gh j-hf.pdf
AP60T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 12m Fast Switching Characteristic ID 45AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized
ap60t03gi.pdf
AP60T03GIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Low Gate Charge RDS(ON) 12m Fast Switching ID 45AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design,low on-resistance and cost-effective
ap60t03gp ap60t03gs.pdf
AP60T03GS/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 12m Fast Switching Speed ID 45AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-e
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