AP6679GM-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP6679GM-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 14 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 780 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: SO8

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AP6679GM-HF datasheet

 ..1. Size:125K  ape
 ap6679gm-hf.pdf pdf_icon

AP6679GM-HF

AP6679GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D Low On-resistance D RDS(ON) 9m D Fast Switching Characteristic ID -14A G RoHS Compliant S S SO-8 S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ru

 7.1. Size:60K  ape
 ap6679gp-a ap6679gs-a.pdf pdf_icon

AP6679GM-HF

AP6679GS/P-A Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID -65A G RoHS Compliant S Description The Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-

 7.2. Size:198K  ape
 ap6679gs.pdf pdf_icon

AP6679GM-HF

AP6679GS/P RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75A G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-263(S) ruggedized device desi

 7.3. Size:153K  ape
 ap6679gi-hf.pdf pdf_icon

AP6679GM-HF

AP6679GI-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS -30V Single Drive Requirement RDS(ON) 9m Lower On-resistance ID -48A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-220CFM(I) ruggedized dev

MOSTRAR MÁS

Otros transistores... AP6677GH, AP6679BGH-HF, AP6679BGI-HF, AP6679BGM-HF, AP6679BGP-HF, AP6679GH-HF, AP6679GI-HF, AP6679GJ-HF, IRF530, AP6679GP, AP6679GP-A-HF, AP6679GR, AP6679GS-A-HF, 2SK662, 2SK663, 2SK664, 2SK665