2SK665 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK665
   Código: 3O
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 50 Ohm
   Paquete / Cubierta: SC-70

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2SK665 Datasheet (PDF)

..1. Size:35K panasonic
2sk665.pdf

Silicon MOS FETs (Small Signal) 2SK6652SK665Silicon N-Channel MOSUnit : mmFor switching2.1 0.10.425 1.25 0.1 0.425 Features High-speed switching1 Small drive current owing to high input impedance Extremely high electrostatic destruction voltage32 Absolute Maximum Ratings (Ta = 25C)0.2 0.1Parameter Symbol Rating UnitDrain-Source voltage VDS 20 V1 : Gat

9.1. Size:515K 1
2sk104 2sk105 2sk162 2sk163 2sk193 2sk195 2sk505 2sk507 2sk514 2sk518 2sk519 2sk523 2sk533 2sk660 2sk997 2sk998 2sk1000 2sk1109.pdf

9.2. Size:61K sanyo
2sk669.pdf

Ordering number:EN2563CN-Channel Enhancement Silicon MOSFET2SK669Very High-Speed Switch,Analog Switch ApplicationsApplications Package Dimensions Analog switches, low-pass filters, Ultrahigh-speedunit:mmswitches.2040A[2SK669]2.24.0Features Large yfs . Enhancemet type.0.40.5 Small ON resistance.0.40.41 2 31 : Drain1.3 1.32 : Sour

9.3. Size:38K nec
2sk660.pdf

DATA SHEETJUNCTION FIELD EFFECT TRANSISTOR2SK660N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORFOR IMPEDANCE CONVERTER OF ECMDESCRIPTION The 2SK660 is suitable for converter of ECM.FEATURES Compact package High forward transfer admittance| yfs | = 1200 S TYP. (VDS = 5 V, ID = 0 A) Low capacitanceCiss = 4.5 pF (VDS = 5 V, VGS = 0 V, f = 1 MHz) Include

9.4. Size:34K panasonic
2sk664.pdf

Silicon MOS FETs (Small Signal) 2SK6642SK664Silicon N-Channel MOSUnit : mmFor switching2.1 0.10.425 1.25 0.1 0.425 Features High-speed switching1 Downsizing of sets by S-mini type package and automatic insertionby taping/magazine packing are available.32 Absolute Maximum Ratings (Ta = 25C)0.2 0.1SymbolParameter Rating UnitVDSDrain-Source breakdown v

9.5. Size:30K panasonic
2sk662.pdf

Silicon Junction FETs (Small Signal) 2SK6622SK662Silicon N-Channel JunctionUnit : mmFor low-frequency amplification2.1 0.10.425 1.25 0.1 0.425 Features High mutual conductance gm1 Low noise type Downsizing of sets by S-mini type package and automatic insertion3by taping/magazine packing are available.2 Absolute Maximum Ratings (Ta = 25C)0.2 0.1Parameter

9.6. Size:30K panasonic
2sk663.pdf

Silicon Junction FETs (Small Signal) 2SK6632SK663Silicon N-Channel JunctionUnit : mmFor low-frequency amplification2.1 0.1For switching0.425 1.25 0.1 0.425 Features1 High mutual conductance gm Low noise type3 Downsizing of sets by S-mini type package and automatic insertion2by taping/magazine packing are available. Absolute Maximum Ratings (Ta = 25C)0.2

9.7. Size:242K inchange semiconductor
2sk667.pdf

isc N-Channel MOSFET Transistor 2SK667FEATURESDrain Current I =8A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay dr

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