2SK787 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK787
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 120 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 350 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: TO-3P

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2SK787 Datasheet (PDF)

..1. Size:173K nec
2sk787.pdf

..2. Size:237K inchange semiconductor
2sk787.pdf

isc N-Channel MOSFET Transistor 2SK787DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching power suppliesactuatercontrol,and pulse circuits.ABSOLUTE MAXIMUM RATINGS(

9.1. Size:182K nec
2sk786.pdf

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9.2. Size:158K nec
2sk785.pdf

9.3. Size:156K nec
2sk784.pdf

9.4. Size:238K inchange semiconductor
2sk788.pdf

isc N-Channel MOSFET Transistor 2SK788DESCRIPTIONDrain Current I =13A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conve

9.5. Size:236K inchange semiconductor
2sk783.pdf

isc N-Channel MOSFET Transistor 2SK783FEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned especially for high voltage,high speed applications,such as switching power supplies .ABSOLUTE M

9.6. Size:237K inchange semiconductor
2sk789.pdf

isc N-Channel MOSFET Transistor 2SK789DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conve

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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