2SK805 Todos los transistores

 

2SK805 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK805

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 100 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 20 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 490 pF

Resistencia drenaje-fuente RDS(on): 0.12 Ohm

Empaquetado / Estuche: TO-3P

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2SK805 Datasheet (PDF)

1.1. 2sk805.pdf Size:82K _no

2SK805
2SK805

1.2. 2sk805.pdf Size:197K _inchange_semiconductor

2SK805
2SK805

isc N-Channel MOSFET Transistor 2SK805 DESCRIPTION ·Drain Current –I =20A@ T =25℃ D C ·Drain Source Voltage- : V =200V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM

 5.1. 2sk807.pdf Size:141K _update

2SK805
2SK805

查询"2SK807"供应商 查询"2SK807"供应商

5.2. 2sk801.pdf Size:154K _nec

2SK805
2SK805

 5.3. 2sk800.pdf Size:146K _nec

2SK805
2SK805

5.4. 2sk806.pdf Size:61K _panasonic

2SK805

 5.5. 2sk809.pdf Size:66K _panasonic

2SK805

5.6. 2sk808.pdf Size:208K _no

2SK805
2SK805

5.7. 2sk807.pdf Size:197K _inchange_semiconductor

2SK805
2SK805

isc N-Channel MOSFET Transistor 2SK807 DESCRIPTION ·Drain Current –I =5A@ T =25℃ D C ·Drain Source Voltage- : V =600V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

5.8. 2sk803.pdf Size:199K _inchange_semiconductor

2SK805
2SK805

isc N-Channel MOSFET Transistor 2SK803 DESCRIPTION ·Drain Current –I =8A@ T =25℃ D C ·Drain Source Voltage- : V =160V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 160 V DSS GS V Gate-Source

5.9. 2sk804.pdf Size:195K _inchange_semiconductor

2SK805
2SK805

isc N-Channel MOSFET Transistor 2SK804 DESCRIPTION ·Drain Current –I =20A@ T =25℃ D C ·Drain Source Voltage- : V =150V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 150

5.10. 2sk806.pdf Size:201K _inchange_semiconductor

2SK805
2SK805

isc N-Channel MOSFET Transistor 2SK806 DESCRIPTION ·Drain Current –I =3A@ T =25℃ D C ·Drain Source Voltage- : V =600V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

5.11. 2sk809a.pdf Size:197K _inchange_semiconductor

2SK805
2SK805

isc N-Channel MOSFET Transistor 2SK809A DESCRIPTION ·Drain Current –I =5A@ T =25℃ D C ·Drain Source Voltage- : V =900V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

5.12. 2sk808a.pdf Size:201K _inchange_semiconductor

2SK805
2SK805

isc N-Channel MOSFET Transistor 2SK808A DESCRIPTION ·Drain Current –I =1A@ T =25℃ D C ·Drain Source Voltage- : V =900V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

5.13. 2sk808.pdf Size:201K _inchange_semiconductor

2SK805
2SK805

isc N-Channel MOSFET Transistor 2SK808 DESCRIPTION ·Drain Current –I =1A@ T =25℃ D C ·Drain Source Voltage- : V =800V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

5.14. 2sk809.pdf Size:197K _inchange_semiconductor

2SK805
2SK805

isc N-Channel MOSFET Transistor 2SK809 DESCRIPTION ·Drain Current –I =5A@ T =25℃ D C ·Drain Source Voltage- : V =800V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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