2SK881 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK881

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 18 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 4 V

|Id|ⓘ - Corriente continua de drenaje: 0.01 A

Tjⓘ - Temperatura máxima de unión: 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Encapsulados: SC-70

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2SK881 datasheet

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2SK881

2SK881 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK881 FM Tuner Applications Unit mm VHF Band Amplifier Applications Low noise figure NF = 2.5dB (typ.) (f = 100 MHz) High forward transfer admittance Yfs = 9 mS (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Gate-drain voltage VGDO -18 V Gate current IG 10 mA

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2SK881

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 2sk882.pdf pdf_icon

2SK881

2SK882 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK882 FM Tuner, VHF RF Amplifier Applications Unit mm Low reverse transfer capacitance Crss = 0.025 pF (typ.) Low noise figure NF = 1.7dB (typ.) High power gain G = 28dB (typ.) ps Recommend operation voltage 5 15 V Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit

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2SK881

2SK880 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK880 Audio Frequency Low Noise Amplifier Applications Unit mm High Yfs Yfs = 15 mS (typ.) at VDS = 10 V, VGS = 0 High breakdown voltage VGDS = -50 V Low noise NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k High input impedance IGSS = -1 nA (max) at VGS = -30 V

MOSTRAR MÁS

Otros transistores... 2SK812, 2SK817, 2SK821, 2SK823, 2SK824, 2SK825, 2SK827, 2SK829, K2611, 2SK882, 2SK941, 2SK951-MR, AP6902AGH-HF, AP6903GH-HF, AP6904GH-HF, AP6906GH-HF, AP6910GSM-HF