2SK941
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK941
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.9
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 100
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 0.6
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4
nS
Cossⓘ - Capacitancia
de salida: 40
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.95
Ohm
Paquete / Cubierta:
TO-92MOD
- Selección de transistores por parámetros
2SK941
Datasheet (PDF)
9.1. Size:138K 1
2sk948.pdf 
Discontinued product.Discontinued product.Discontinued product.
9.6. Size:540K toshiba
2sk944.pdf
Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor
9.9. Size:134K fuji
2sk949m.pdf
"2SK949M"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK949M"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK949M"Powered by ICminer.com Electronic-Library Service CopyRight 2003
9.11. Size:304K inchange semiconductor
2sk948.pdf
isc N-Channel MOSFET Transistor 2SK948FEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
9.12. Size:203K inchange semiconductor
2sk944.pdf
isc N-Channel MOSFET Transistor 2SK944DESCRIPTIONDrain Current I =22A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 250 V
9.13. Size:279K inchange semiconductor
2sk947-mr.pdf
isc N-Channel MOSFET Transistor 2SK947-MRFEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
9.14. Size:278K inchange semiconductor
2sk949-mr.pdf
isc N-Channel MOSFET Transistor 2SK949-MRFEATURESDrain Current : I = 6.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
Otros transistores... FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, GMM3x120-0075X2-SMD
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, CS150N03A8
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
, FDMS3610S
, GWM100-0085X1-SMD
, FDMS3606S
, GWM100-01X1-SL
.
History: STP33N65M2
| STP55N06L
| RFL1N10L
