AP75N07GP-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP75N07GP-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 73 nS
   Cossⓘ - Capacitancia de salida: 690 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
   Paquete / Cubierta: TO-220

Búsqueda de reemplazo de MOSFET AP75N07GP-HF

AP75N07GP-HF Datasheet (PDF)

5.1. Size:152K ape
ap75n07gp.pdf

AP75N07GS/P-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFETD Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 80AG Halogen Free & RoHS CompliantSDescriptionAP75N07 series are from Advanced Power innovated

6.1. Size:95K ape
ap75n07gi-hf.pdf

AP75N07GI-HFRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 43AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching

6.2. Size:126K ape
ap75n07gw.pdf

AP75N07GWRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 90AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and

6.3. Size:192K ape
ap75n07gs p.pdf

AP75N07GS/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 80AGSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching, TO-220(P)DSruggedized device design,

6.4. Size:165K ape
ap75n07gs.pdf

6.5. Size:97K ape
ap75n07gsp-hf.pdf

AP75N07GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 75V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 80AG Halogen Free & RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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