AP70T15GP-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP70T15GP-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 138.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 46 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 65 nS

Cossⓘ - Capacitancia de salida: 385 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm

Encapsulados: TO-220

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AP70T15GP-HF datasheet

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 ap70t15gp-hf.pdf pdf_icon

AP70T15GP-HF

AP70T15GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 150V Lower On-resistance RDS(ON) 28m Fast Switching Characteristic ID 46A G RoHS Compliant & Halogen-Free S Description AP70T15 series are from Advanced Power innovated design and silicon process technology to achieve the lowe

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 ap70t15gi.pdf pdf_icon

AP70T15GP-HF

AP70T15GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 150V Lower On-resistance RDS(ON) 28m Fast Switching Characteristic ID 26A G RoHS Compliant & Halogen-Free S Description AP70T15 series are from Advanced Power innovated design and silicon process technology to achieve the lowe

 6.2. Size:93K  ape
 ap70t15gi-hf.pdf pdf_icon

AP70T15GP-HF

AP70T15GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 150V Lower On-resistance RDS(ON) 28m Fast Switching Characteristic ID 26A G RoHS Compliant & Halogen-Free S Description AP70T15 series are from Advanced Power innovated design and silicon process technology to achieve the lowe

 9.1. Size:121K  ape
 ap70t03gi.pdf pdf_icon

AP70T15GP-HF

AP70T03GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Performance BVDSS 30V D Single Drive Requirement RDS(ON) 9m Full Isolation Package ID 60A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance

MOSTRAR MÁS

Otros transistores... AP73T03GJ-HF, AP73T03GMT-HF, AP75N07AGP-HF, AP75N07GI-HF, AP75N07GP-HF, AP75N07GS-HF, AP75N07GW, AP70T15GI-HF, 12N60, AP72T02GH-HF, AP75T10AGP, AP75T10BGP-HF, AP75T10GI-HF, AP75T10GP-HF, AP75T10GS, AP75T12GI-HF, AP75T12GP-HF