AP86T03GH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP86T03GH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 78 nS

Cossⓘ - Capacitancia de salida: 485 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm

Encapsulados: TO-252

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AP86T03GH datasheet

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 ap86t03gh ap86t03gj.pdf pdf_icon

AP86T03GH

AP86T03GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 6.5m Fast Switching Characteristic ID 75A G S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, S TO-252(H) ruggedized device

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 ap86t02gj.pdf pdf_icon

AP86T03GH

AP86T02GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 25V Low On-resistance RDS(ON) 6m Fast Switching Characteristic ID 75A G RoHS Compliant S Description G AP86T02 series are from Advanced Power innovated design and silicon D S TO-252(H) process technology to achieve the low

 8.2. Size:264K  ape
 ap86t02gh j-hf.pdf pdf_icon

AP86T03GH

AP86T02GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 25V D Low On-resistance RDS(ON) 6m Fast Switching Characteristic ID 75A G RoHS Compliant S Description G D S TO-252(H) The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited

 8.3. Size:235K  ape
 ap86t02gh.pdf pdf_icon

AP86T03GH

AP86T02GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 25V Low On-resistance RDS(ON) 6m Fast Switching Characteristic ID 75A G RoHS Compliant S Description G AP86T02 series are from Advanced Power innovated design and silicon D S TO-252(H) process technology to achieve the low

MOSTRAR MÁS

Otros transistores... AP85T10AGP-HF, AP85T10GP-HF, AP85U03GH-HF, AP85U03GM-HF, AP85U03GMT-HF, AP85U03GP-HF, AP86T02GH-HF, AP86T02GJ-HF, IRF1405, AP86T03GJ, AP88N30W, AP90T03GH, AP90T03GI, AP90T03GJ, AP90T03GR, AP90T03GS-HF, AP90T03P