AP86T03GJ Todos los transistores

 

AP86T03GJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP86T03GJ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 78 nS
   Cossⓘ - Capacitancia de salida: 485 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
   Paquete / Cubierta: TO-251
 

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AP86T03GJ Datasheet (PDF)

 ..1. Size:94K  ape
 ap86t03gh ap86t03gj.pdf pdf_icon

AP86T03GJ

AP86T03GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 6.5m Fast Switching Characteristic ID 75AGSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,STO-252(H)ruggedized device

 8.1. Size:186K  ape
 ap86t02gj.pdf pdf_icon

AP86T03GJ

AP86T02GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 25V Low On-resistance RDS(ON) 6m Fast Switching Characteristic ID 75AG RoHS CompliantSDescriptionGAP86T02 series are from Advanced Power innovated design and silicon DSTO-252(H)process technology to achieve the low

 8.2. Size:264K  ape
 ap86t02gh j-hf.pdf pdf_icon

AP86T03GJ

AP86T02GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 25VD Low On-resistance RDS(ON) 6m Fast Switching Characteristic ID 75AG RoHS CompliantSDescriptionGDSTO-252(H)The TO-252 package is widely preferred for commercial-industrialsurface mount applications and suited

 8.3. Size:235K  ape
 ap86t02gh.pdf pdf_icon

AP86T03GJ

AP86T02GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 25V Low On-resistance RDS(ON) 6m Fast Switching Characteristic ID 75AG RoHS CompliantSDescriptionGAP86T02 series are from Advanced Power innovated design and silicon DSTO-252(H)process technology to achieve the low

MOSTRAR MÁS

Otros transistores... AP85T10GP-HF , AP85U03GH-HF , AP85U03GM-HF , AP85U03GMT-HF , AP85U03GP-HF , AP86T02GH-HF , AP86T02GJ-HF , AP86T03GH , MMIS60R580P , AP88N30W , AP90T03GH , AP90T03GI , AP90T03GJ , AP90T03GR , AP90T03GS-HF , AP90T03P , AP90T06GP-HF .

History: AM1440N | MTP2311N3 | HM8N20I | QM3001D

 

 
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