AP90T03P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP90T03P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 96 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 83 nS
   Cossⓘ - Capacitancia de salida: 1010 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: TO-220

Búsqueda de reemplazo de MOSFET AP90T03P

AP90T03P Datasheet (PDF)

..1. Size:146K ape
ap90t03p.pdf

AP90T03PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On- resistance BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching Characteristic ID 75AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design,low on-resistance

0.1. Size:126K ape
ap90t03p-hf.pdf

AP90T03P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On- resistance BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching Characteristic ID 75AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device desig

7.1. Size:206K ape
ap90t03gh ap90t03gj.pdf

AP90T03GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On- resistance BVDSS 30VD Simple Drive Requirement RDS(ON) 4m Fast Switching Characteristic ID 75AGSDescriptionGThe TO-252 package is widely preferred for commercial-industrialDSTO-252(H)surface mount applications and suited for low voltage ap

7.2. Size:124K ape
ap90t03gr.pdf

AP90T03GRRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On- resistance BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching Characteristic ID 75AGSDescriptionAdvanced Power MOSFETs from APEC provide thede signer withthe best combination of fast switching, ruggedized device design,low on-resistance

7.3. Size:92K ape
ap90t03gs-hf.pdf

AP90T03GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On- resistance BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching Characteristic ID 75AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggediz

7.4. Size:158K ape
ap90t03gs.pdf

AP90T03GSRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On- resistance BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching Characteristic ID 75AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withGthe best combination of fast switching, ruggedized device design,DS TO-263(S)

7.5. Size:152K ape
ap90t03gi.pdf

AP90T03GIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Performance BVDSS 30VD Single Drive Requirement RDS(ON) 4m Full Isolation Package ID 75AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance

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