AP9402GYT-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP9402GYT-HF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 3.57 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 11.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 6 nS
Cossⓘ - Capacitancia de salida: 110 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
Encapsulados: PMPAK3X3
Búsqueda de reemplazo de AP9402GYT-HF MOSFET
- Selecciónⓘ de transistores por parámetros
AP9402GYT-HF datasheet
..1. Size:95K ape
ap9402gyt-hf.pdf 
AP9402GYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Lower Profile RDS(ON) 18m RoHS Compliant & Halogen-Free ID 11.5A G S D D Description D Advanced Power MOSFETs from APEC provide the D designer with the best combination of fast switching, ruggedized device de
7.1. Size:97K ape
ap9402gmt-hf.pdf
AP9402GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D SO-8 Compatible with Heatsink RDS(ON) 18m Low On-resistance ID 20.6A G RoHS Compliant & Halogen-Free D S D D Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switchi
8.1. Size:96K ape
ap9402agyt-hf.pdf
AP9402AGYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Lower Profile RDS(ON) 18m RoHS Compliant & Halogen-Free ID 11.5A G S D D Description D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switching, ruggedized device de
9.1. Size:95K ape
ap9404gm-hf.pdf
AP9404GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 12m D Fast Switching Characteristic ID 12A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fas
9.3. Size:94K ape
ap9408agm-hf.pdf
AP9408AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D Simple Drive Requirement RDS(ON) 10m D D Fast Switching Characteristic ID 12.5A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of
9.4. Size:143K ape
ap9408agh.pdf
AP9408AGH RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID 53A G S Description Advanced Power MOSFETs from APEC provide the G D S designer with the best combination of fast switching, TO-252(H) ruggedized device desi
9.5. Size:99K ape
ap9408gh ap9408gj.pdf
AP9408GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic G ID 57A S Description Advanced Power MOSFETs from APEC provide the G D S designer with the best combination of fast switching, TO-252(H) ruggedized device desi
9.6. Size:59K ape
ap9408gm-hf.pdf
AP9408GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 10m D Fast Switching Characteristic ID 13.3A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of f
9.7. Size:169K ape
ap9408agm.pdf
AP9408AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D Simple Drive Requirement RDS(ON) 10m D D Fast Switching Characteristic ID 12.5A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP9408A series are fro
9.8. Size:93K ape
ap9408cgm-hf.pdf
AP9408CGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 8m D Fast Switching Characteristic ID 14A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fas
9.9. Size:145K ape
ap9408agp.pdf
AP9408AGP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID 53A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance a
9.10. Size:169K ape
ap9408gm.pdf
AP9408GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 10m D Fast Switching Characteristic ID 13.3A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP9408 series are from
9.11. Size:152K ape
ap9408agi.pdf
AP9408AGI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Performance BVDSS 30V D Single Drive Requirement RDS(ON) 10m Full Isolation Package ID 53A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance
Otros transistores... AP92U03GM-HF, AP92U03GMT-HF, AP92U03GP-HF, AP92U03GS-HF, AP93T03AGMT-HF, AP93T08GP-HF, AP9402AGYT-HF, AP9402GMT-HF, IRLZ44N, AP9404GH-HF, AP9404GM-HF, AP9408AGH, AP9408AGI, AP9408AGM-HF, AP9408AGP, AP9408CGM-HF, AP9408GH
